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Growth of Sb2Te3 single crystals by hot-wall-epitaxy

  • 2. Crystal growth and new materials
  • Conference paper
  • First Online:
Book cover Physics of Narrow Gap Semiconductors

Part of the book series: Lecture Notes in Physics ((LNP,volume 152))

Abstract

Antimony-telluride (Sb2Te3) was grown epitaxially by Hot-Wall-technique on BaF2-substrates. The orientation is Sb2Te3(0001)1 [ BaF2(111)with the trigonal system of Sb2Te3 tilted by 60o against the BaF2(111)-system. Single-crystalline layers grow only at substrate temperatures >0.8Tm,(Tm=890K). In contrast to melt-grown crystals the free carrier concentration could be varied via the Te-partial pressure. The quality of the films is similar to that of crystals grown from the melt,as examinated by X-ray, IR- and Raman-experiments.

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Authors and Affiliations

  1. I. Physikalisches Institut, RWTH Aachen, D-5100, Aachen, Germany

    A. Krost & P. Grosse

Authors
  1. A. Krost
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  2. P. Grosse
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Editor information

E. Gornik H. Heinrich L. Palmetshofer

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© 1982 Springer-Verlag

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Krost, A., Grosse, P. (1982). Growth of Sb2Te3 single crystals by hot-wall-epitaxy. In: Gornik, E., Heinrich, H., Palmetshofer, L. (eds) Physics of Narrow Gap Semiconductors. Lecture Notes in Physics, vol 152. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11191-3_6

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  • DOI: https://doi.org/10.1007/3-540-11191-3_6

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-11191-7

  • Online ISBN: 978-3-540-38978-1

  • eBook Packages: Springer Book Archive

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