Abstract
Antimony-telluride (Sb2Te3) was grown epitaxially by Hot-Wall-technique on BaF2-substrates. The orientation is Sb2Te3(0001)1 [ BaF2(111)with the trigonal system of Sb2Te3 tilted by 60o against the BaF2(111)-system. Single-crystalline layers grow only at substrate temperatures >0.8Tm,(Tm=890K). In contrast to melt-grown crystals the free carrier concentration could be varied via the Te-partial pressure. The quality of the films is similar to that of crystals grown from the melt,as examinated by X-ray, IR- and Raman-experiments.
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© 1982 Springer-Verlag
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Krost, A., Grosse, P. (1982). Growth of Sb2Te3 single crystals by hot-wall-epitaxy. In: Gornik, E., Heinrich, H., Palmetshofer, L. (eds) Physics of Narrow Gap Semiconductors. Lecture Notes in Physics, vol 152. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11191-3_6
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DOI: https://doi.org/10.1007/3-540-11191-3_6
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