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Electronic properties of KxRb1−xAu , an indirect small gap semiconductor

  • 2. Crystal growth and new materials
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Book cover Physics of Narrow Gap Semiconductors

Part of the book series: Lecture Notes in Physics ((LNP,volume 152))

Abstract

The energy bands of RbAu and KAu are calculated by the self-consistent local-density pseudopotential method using hard-core potentials. RbAu is an indirect gap semiconductor whereas KAu is a metal. A study of KxRb1−xAu in the virtual crystal approximation shows that the metal-semiconductor transition occurs at xc=0.45 where the alloy is an indirect zero-gap material. The chemical bonding in KxRb1−xAu is ionic with Au playing the role of anion.

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Author information

Authors and Affiliations

  1. Istituto di Fisica and GNSM-CNR, Università di Cagliari, Cagliari, Italy

    F. Meloni

  2. Institut de Physique Appliquée, EPF-Lausanne, Switzerland

    F. Meloni & A. Baldereschi

  3. Istituto di Fisica teorica and GNSM-CNR, Università di Trieste, Trieste, Italy

    A. Baldereschi

Authors
  1. F. Meloni
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  2. A. Baldereschi
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Editor information

E. Gornik H. Heinrich L. Palmetshofer

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© 1982 Springer-Verlag

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Meloni, F., Baldereschi, A. (1982). Electronic properties of KxRb1−xAu , an indirect small gap semiconductor. In: Gornik, E., Heinrich, H., Palmetshofer, L. (eds) Physics of Narrow Gap Semiconductors. Lecture Notes in Physics, vol 152. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11191-3_5

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  • DOI: https://doi.org/10.1007/3-540-11191-3_5

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-11191-7

  • Online ISBN: 978-3-540-38978-1

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