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New aspects of the material and device technology of intrinsic infrared photodetectors

  • 7. Panel Discussion on Technology
  • Conference paper
  • First Online:
Physics of Narrow Gap Semiconductors

Part of the book series: Lecture Notes in Physics ((LNP,volume 152))

  • 197 Accesses

Abstract

The panel discussion consisted of three main parts: Introductory statements of the four panelists about the state of IR-detector and IR-diodelaser research, posing of unresolved questions of the panelists to the audience and discussion. Here all three parts are covered. As far as the common discussion is concerned only main ideas are presented without quotation of the speakers.

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Authors and Affiliations

  1. Fraunhofer-Institut für Physikalische Messtechnik, Heidenhofstrasse 8, D-7800, Freiburg

    H. Preier (coordinator and chairman)

Authors
  1. H. Preier
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Editor information

E. Gornik H. Heinrich L. Palmetshofer

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© 1982 Springer-Verlag

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Preier, H. (1982). New aspects of the material and device technology of intrinsic infrared photodetectors. In: Gornik, E., Heinrich, H., Palmetshofer, L. (eds) Physics of Narrow Gap Semiconductors. Lecture Notes in Physics, vol 152. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11191-3_47

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  • DOI: https://doi.org/10.1007/3-540-11191-3_47

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-11191-7

  • Online ISBN: 978-3-540-38978-1

  • eBook Packages: Springer Book Archive

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