Abstract
The specific heats of samples of Pb1−xGexTe (0.01 < x < 0.09) in the temperature range 2 to 200 K show two peaks for x < 0.03 and three for 0.03 < x < 0.08. The two peaks are associated with the main structural phase transition and with a low temperature tunnelling mode of the small Ge++ ions between two equivalent positions in the distorted unit cell. The additional peak observed over the restricted range of concentrations is associated with the predicted inhomogenous phase arising from coupling between the structural phase transition and the concentration gradient of Ge++.
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References
Takaoka, S. and Murase, K., Phys. Rev. B20 (1979) 2823.
Katayama, S. and Murase, K., Solid State Comm. 36 (1980) 707.
Yaraneri, H., Grassie, A.D.C., He Yusheng and Loram, J.W., J. Phys. 14 (1981) L441.
Yakoby, Y., Z. Phys. B41 (1981) 269.
Halperin B.I. and Varma, C.M., Phys. Rev. B14 (1976) 4030.
Hohnke, D.K., Holloway, H. and Kaiser, S. J. Phys. Chem. Solids 33 (1972) 2053.
Levanyuk, A.P. and Minyukov, S.A., Sov. Solid State 22 (1980) 1050.
Heine, V. and McConnell, J.D.C., Phys. Rev. Lett. 46 (1981) 1092.
Cahn, J.W., Trans. Metal Soc. AIHE 242 (1968) 166.
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Yaraneri, H., Grassie, A.D.C., Loram, J.W. (1982). Coupled phase transitions in Pb1−xGexTe. In: Gornik, E., Heinrich, H., Palmetshofer, L. (eds) Physics of Narrow Gap Semiconductors. Lecture Notes in Physics, vol 152. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11191-3_45
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DOI: https://doi.org/10.1007/3-540-11191-3_45
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