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Tm1−xEuxSe: New narrow gap magnetic semiconductors

  • 2. Crystal Growth and New Materials
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Physics of Narrow Gap Semiconductors

Part of the book series: Lecture Notes in Physics ((LNP,volume 152))

Abstract

In the Tm1−xEuxSe pseudobinary system the compounds are semiconductors in the composition range x>0.25. The 4f13 level of divalent Tm lies only 0.4 eV or less below the 5d6s conduction band. on single crystals we have measured on some semiconducting compositions the initial susceptibility, the magnetization in fields up to 100 kOe, the electrical conductivity as a function of temperature and the electrical resistivity and the specific volume under pressure.

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Author information

Authors and Affiliations

  1. Laboratorium für Festkbrperphysik, ETH Zürich, CH-8093, Zürich, Switzerland

    H. Boppart & P. Wachter

Authors
  1. H. Boppart
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  2. P. Wachter
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Editor information

E. Gornik H. Heinrich L. Palmetshofer

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© 1982 Springer-Verlag

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Boppart, H., Wachter, P. (1982). Tm1−xEuxSe: New narrow gap magnetic semiconductors. In: Gornik, E., Heinrich, H., Palmetshofer, L. (eds) Physics of Narrow Gap Semiconductors. Lecture Notes in Physics, vol 152. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11191-3_4

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  • DOI: https://doi.org/10.1007/3-540-11191-3_4

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-11191-7

  • Online ISBN: 978-3-540-38978-1

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