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Uniaxial-stress-enhanced electron spin resonance in InSb

  • 5. Magneto-Optics
  • Conference paper
  • First Online:
Physics of Narrow Gap Semiconductors

Part of the book series: Lecture Notes in Physics ((LNP,volume 152))

Abstract

A strong enhancement of the electron spin resonance in n-InSb is observed by applying uniaxial stress. This is explained in terms of a six-band model taking into account the reduced symmètry of the stressed crystal.

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References

  1. B.D. McCombe, Int.Conf.Appl.High.Magn.Fields, Würzburg 1974.

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  3. W.Zawadzki, Lecture Notes in Physics No.133, Springer 1980, p.85.

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  4. R.J.Wagner, B.D.McCombe, F.Kuehar (unpublished)

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  5. W.Zawadzki, J.Wlasak, Proc.Adv.Study Institute on Theoretical Aspects and New Developments in Magneto-Optics, Antwerp, July 1979.

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Author information

Authors and Affiliations

  1. Institut für Festkörperphysik, Universität, A-1090, Wien

    F. Kuchar & R. Meisels

  2. Ludwig Boltzmann Institut für Festkörperphysik, A-1060, Wien

    F. Kuchar & R. Meisels

  3. Institut für Theoretische Physik, University, A-8010, Graz, Austria

    M. Kriechbaum

Authors
  1. F. Kuchar
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  2. R. Meisels
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  3. M. Kriechbaum
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Editor information

E. Gornik H. Heinrich L. Palmetshofer

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© 1982 Springer-Verlag

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Kuchar, F., Meisels, R., Kriechbaum, M. (1982). Uniaxial-stress-enhanced electron spin resonance in InSb. In: Gornik, E., Heinrich, H., Palmetshofer, L. (eds) Physics of Narrow Gap Semiconductors. Lecture Notes in Physics, vol 152. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11191-3_32

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  • DOI: https://doi.org/10.1007/3-540-11191-3_32

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-11191-7

  • Online ISBN: 978-3-540-38978-1

  • eBook Packages: Springer Book Archive

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