Abstract
The transport properties of electrons in low-temperature Hg1−x CdxTe (x ≈ 0.2) have been studied using photo-Hall techniques, where a CO2 laser is used to produce high electron-hole plasma densities. At high excitation levels, the mobility is found to decrease monotonically with increasing carrier density. The data is compared with a transport theory for nonparabolic bands which employs scattering cross sections derived by the partial-wave phase shift method. The effects of electron-hole scattering, screening by the photoexcited electrons and holes and disorder scattering are considered. It is shown that dynamic hole screening of the electron-hole interactions must be accounted for in the analysis in order to obtain good agreement between theory and experiment.
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References
F.J. Bartoli, R.E. Allen, L. Esterowitz, and M.R. Kruer: Solid State Commun. 25 (1978) 963.
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J.R. Meyer and F.J. Bartoli: to be published.
Apart from those differences mentioned in the text, electron-hole collisions are somewhat inelastic. However, since the heavy hole effective mass is two orders of magnitude larger than the electron mass in Hg0.8Cd0.2Te, one may assume elasticity except at very high electron Fermi energies. The approximation begins to break down only at carrier densities above those obtained in the present experiment.
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Consider a partition of the hole system into two components with densities p 1 and p 2. Using the definition r pi = s pi τ Dpi/τ λ and the results τDpi = κ/P i eμ p and \({{dp_i } \mathord{\left/{\vphantom {{dp_i } {dE_{F_p } }}} \right.\kern-\nulldelimiterspace} {dE_{F_p } }} = ({{p_i } \mathord{\left/{\vphantom {{p_i } p}} \right.\kern-\nulldelimiterspace} p}){{dp} \mathord{\left/{\vphantom {{dp} {dE_{F_p } }}} \right.\kern-\nulldelimiterspace} {dE_{F_p } }}\), one finds that r pi → r p and that the screening length obtained is unaffected by the partition. However, if the factor s pi is omitted from the definitions of r p and r pi, one obtains the unreasonable result that the screening length is sensitive to the details of this artificial partition
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© 1982 Springer-Verlag
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Bartoli, F.J., Hoffman, C.A., Meyer, J.R., Allen, R.E. (1982). Photo-hall measurements of high-density photoexcited electrons in Hg1−x CdxTe. In: Gornik, E., Heinrich, H., Palmetshofer, L. (eds) Physics of Narrow Gap Semiconductors. Lecture Notes in Physics, vol 152. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11191-3_19
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DOI: https://doi.org/10.1007/3-540-11191-3_19
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