Abstract
With the technique of molecular beam epitaxy, CdTe and CdxHg1−x Te (CMT) have been grown on CdTe (111)B substrates. The epiaxial temperatures are between 25°C and 250°C for CdTe and 120°C for CMT. These layers, with thickness up to 10μm, present a good cristallinity and low carrier concentrations at 77K. The low Hall mobility for MBE CMT can be improved by a post growth annealing.
References
J.P.Faurie, A.Million: European Workshop on MBE — Stuttgart — March 1981
J.P.Faurie, A.Million: To appear in J.of Crystal Growth (1981)
P.Goldfinger, M.Jeunehomme: Trans.Faraday Soc. 59 (1963) 2851
R.F.Brebrick, A.J.Strauss: J.Phys.Chem. Solids 25 (1964) 1441
J.P.Faurie, A.Million: 5 th Intern. Thin Film Congress — Israel — Sept. 1981
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© 1982 Springer-Verlag
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Faurie, JP., Million, A. (1982). Molecular beam epitaxy of CdTe and CdxHg1−xTe. In: Gornik, E., Heinrich, H., Palmetshofer, L. (eds) Physics of Narrow Gap Semiconductors. Lecture Notes in Physics, vol 152. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11191-3_12
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DOI: https://doi.org/10.1007/3-540-11191-3_12
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