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Plasma reflection spectrum of the Pb 1−xSnxTe inhomogeneous layers and vapour transport process of Pb 1−xSnxTe

  • 2. Crystal growth and new materials
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Physics of Narrow Gap Semiconductors

Part of the book series: Lecture Notes in Physics ((LNP,volume 152))

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Abstract

The carrier concentration profile of P/P+Pb0.8Sn0.2Te LPE layers and isothermal diffusion layers are determined by the measurement of infrared plasma reflection. It is found that the important mechanism of diffusion can not be metal vacancies but interstitial metal defects and nonmetal vacancies. The horizontal vapour transport rate can be readily measured by balance method in the process of Pb1−xSnxTe vapour growth in a closed tube. The effect of the stoichiometric rate and the residual gas on the transport rate in the same tube is studied.

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Authors and Affiliations

  1. Shanghai Institute of Technical Physics, Academia Sinica, USSR

    Yuan Shi-xin, Leng Jing, Yang Yong-nian, Xie Qin-xi, Si Sheng-lai & Yu Mei-fang

Authors
  1. Yuan Shi-xin
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  2. Leng Jing
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  3. Yang Yong-nian
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  4. Xie Qin-xi
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  5. Si Sheng-lai
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  6. Yu Mei-fang
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Editor information

E. Gornik H. Heinrich L. Palmetshofer

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© 1982 Springer-Verlag

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Shi-xin, Y., Jing, L., Yong-nian, Y., Qin-xi, X., Sheng-lai, S., Mei-fang, Y. (1982). Plasma reflection spectrum of the Pb 1−xSnxTe inhomogeneous layers and vapour transport process of Pb 1−xSnxTe. In: Gornik, E., Heinrich, H., Palmetshofer, L. (eds) Physics of Narrow Gap Semiconductors. Lecture Notes in Physics, vol 152. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11191-3_11

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  • DOI: https://doi.org/10.1007/3-540-11191-3_11

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-11191-7

  • Online ISBN: 978-3-540-38978-1

  • eBook Packages: Springer Book Archive

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