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Influence of impurity doping on the electrical properties of LPE grown Pb1−xSnxTe and PbSeyTe1−y

  • 2. Crystal growth and new materials
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Physics of Narrow Gap Semiconductors

Part of the book series: Lecture Notes in Physics ((LNP,volume 152))

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Abstract

Pb1−xSnxTe (05⩽x⩽0.25) and PbSe0.08Te0.92 layers doped with In,Cd, T1, As, and Bi were grown by the LPE method. The doping characteristics and electrical properties of the epilayers were studied by direct Hall and resistivity measurements. The results are discussed in view of the existing theoretical models.

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Authors and Affiliations

  1. Solid State Physics Department, Soreq Nuclear Research Centre, Yavne, Israel

    Z. Feit, A. Zemel, D. Eger & I. Sternberg

Authors
  1. Z. Feit
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  2. A. Zemel
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  3. D. Eger
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  4. I. Sternberg
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Editor information

E. Gornik H. Heinrich L. Palmetshofer

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© 1982 Springer-Verlag

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Feit, Z., Zemel, A., Eger, D., Sternberg, I. (1982). Influence of impurity doping on the electrical properties of LPE grown Pb1−xSnxTe and PbSeyTe1−y . In: Gornik, E., Heinrich, H., Palmetshofer, L. (eds) Physics of Narrow Gap Semiconductors. Lecture Notes in Physics, vol 152. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11191-3_10

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  • DOI: https://doi.org/10.1007/3-540-11191-3_10

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-11191-7

  • Online ISBN: 978-3-540-38978-1

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