Crystal growth of narrow gap semiconductors theory and techniques

  • M. Royer
Conference paper
Part of the Lecture Notes in Physics book series (LNP, volume 133)


Crystal Growth Vapour Transport Liquid Phase Epitaxy Computer Drawing Hydrogen Selenide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. (1).
    D.R. LOVETT-Semimetals and narrow — band gap semiconductors, PION-London 1977Google Scholar
  2. (2).
    A. LAUGIER-Revue Phys. Appliquée 8, 259 (1973)Google Scholar
  3. (3).
    J.C. BRICE-The growth of crystals from the melt, North Holland, Amsterdam, 1965Google Scholar
  4. (4).
    R.A. LAUDISE The growth of single crystals, Prentice-Hall, Englewood Cliffs, 1970Google Scholar
  5. (5).
    J. STEININGER-J. Electron. Materials 5, 299 (1976)Google Scholar
  6. (6).
    L.N. SWINK and M.J. BRAU Metall Trans. 1, 629 (1970)Google Scholar
  7. (7).
    T.C. HARMAN J. Electron. Materials 1, 230 (1972)Google Scholar
  8. (8).
    G. FIORITO, G. GASPARRINI and D. PASSOMI J. Electrochem. Soc. 125, 315 (1978)Google Scholar
  9. (9).
    B.E. BARLETT, P. CAPPER, J.E. HARRIS and M.J.T. QUELCH-J. Crystal growth 46, 623 (1979) and 47 341 (1979)Google Scholar
  10. (10).
    C.HL. GOODMAN Crystal Growth vol.1, Plenum Press, New York, 1974Google Scholar
  11. (11).
    R. UEDA, O. OHTSUKI, K. SHINOHARA and Y. UEDA-J. Crystal growth 13–14, 668 (1972)Google Scholar
  12. (12).
    A.M. ANDREWS, J.T. LONGO, J.E. CHARKE and E.R. GARTNER-Appl. Phys. letters 26,438 (1975)Google Scholar
  13. (13).
    I. MELNGAILIS and T.C. HARMAN in-Semiconductors and semimetals, ed. by R.K. WILLARDSON and A.C. BEER, Academic Press, New York, 1970, Vol.5 p.111Google Scholar
  14. (14).
    J.L. SCHMIT and E.L. STELZER-J. Electron.Materials 7, 65 (1978)Google Scholar
  15. (15).
    G. BAHIR, T. BERNSTEIN and R. KALISH-Appl. Phys. Letters 34,486 (1979)Google Scholar
  16. (16).
    H.G. SCHNEIDER and V. RUTH-Advances in epitaxy and endotaxy, Elsevier, Amsterdam, 1976Google Scholar
  17. (17).
    M. KUMAGAWA, A.F. WITT, M. LICHTENSTEIGER and H. GATOS-J. Electrochem. Soc. 120,583 (1973)Google Scholar
  18. (18).
    D.T. CHEUNG, A.M. ANDREWS, E.R. GERTNER, G.M. WILLIAMS,-J.E. CLARKE, J.G. PASKO and J.T. LONGO-Appl. Phys. letters 30,587 (1977)Google Scholar
  19. (19).
    J.W. WAGNER and A.G. THOMPSON-J. Electrochem. Soc. 117,936 (1970)Google Scholar
  20. (20).
    I. KASAI and D.W. BASSETT-J. Crystal growth 27,215 (1974)Google Scholar
  21. (21).
    M. LANIR, C.C. WANG and A.H.B. VANDERWYCK-Appl. Phys. Letters 34,50 (1979)Google Scholar
  22. (22).
    L.R. TOMASETTA and C.G. FONSTAD-Appl. Phys. letters 24,567 (1974)Google Scholar
  23. (23).
    C.C. WANG and S.R. HAMPTON-Solid State Electron. 18,121 (1975)Google Scholar
  24. (24).
    A.M. LOCKWOOD, J.R. BALON, P.S. CHIA and F.J. RENDA-Infrared Phys. 16,509 (1976)Google Scholar
  25. (25).
    I. KASAI, D.W. BASSETT and J. HORNUNG-J. Appl. Phys. 47,3167 (1976)Google Scholar
  26. (26).
    H.M. MANASEVIT and W.I. SIMPSON-J. Electrochem. Soc. 122,444 (1975)Google Scholar
  27. (27).
    F. BAILLY, G. COHEN-SOLAL and Y. MARFAING-C.R. Acad. Sci. Paris, 261,103 (1963)Google Scholar
  28. (28).
    O.N. TUFTE and E.L. STELZER.-J. Appl. Phys. 40,4559 (1969)Google Scholar
  29. (29).
    Z. NOWAK, J. PIOTROWSKI, T. PIOTROWSKI and J. SADOWSKI-Thin Solid film 52,403 (1978)Google Scholar
  30. (30).
    D.K. HOHNKE and S.W. KAISER-J. Appl. Phys. 45,892 (1974)Google Scholar
  31. (31).
    C. CORSI, I. ALFIERI and G. PETROCCO-Appl. Phys. Lett. 24,484 (1974)Google Scholar
  32. (32).
    G. COHEN-SOLAL, A. ZOZIME, C. MOTTE and Y. RIANT-Infrared Phys 16,555 (1976)Google Scholar
  33. (33).
    R.H. CORNELY, L. SUCHOW, D. DERIDDER, T. GABARA and P. DIODATO-Spring Meeting, The Electrochem Soc. Boston, Mass, 10 May 1979Google Scholar
  34. (34)a.
    R.F.C. FARROW in-1976 Crystal Growth and materials-ECCG-1 Zurich, E. KALDIS and H.J. SCHEEL eds North-Holland, Amesterdam 1977Google Scholar
  35. (34)b.
    A.Y. CHO, J.Vac.Sci.Technol. 16,275 (1979)Google Scholar
  36. (35).
    J.N. SCHULMAN and T.C. ROC GILL-Appl. Phys. Lett. 34,663 (1979)Google Scholar
  37. (36).
    M. AVEN and J.S. PRENER-Physics and Chemistry of II-VI Compounds, North-Holland, Amsterdam, 1967Google Scholar
  38. (37).
    G.H. GILMER K.A. JACKSON in ref (34) 1976 Crystal Growth and materials-ECCG-1 Zurich, E. KALDIS and H.J. SCHEEL eds North-Holland, Amesterdam 1977Google Scholar
  39. (38).
    W.R. RUNYAN-Semiconductor measurements and instrumentation-Mac Graw Hill, New-York, 1975Google Scholar
  40. (39).
    P.F. KANE and G.B. LARRABEE-Characterization of semiconductor materials Mc Graw Hill, New York, 1970Google Scholar
  41. (40).
    P. CAPPER, J.E. HARRIS, D. NICHOLSON and D. COLE-J. Crystal Growth 46,575 (1979)Google Scholar
  42. (41).
    R. UEDA and J.B. MULLIN-Crystal Growth and characterization, North-Holland, Amsterdam, 1975Google Scholar
  43. (42).
    B.L. SHARMA and R.K. PUROHIT-Semiconductor and hetero junctions, Pergamon Press, Oxford, 1974Google Scholar
  44. (43).
    W. ROLLS, R. LEE and J. EDDINGTON-Solid-State Electron 13,75 (1970)Google Scholar
  45. (44).
    A. ZOZME, G. COHEN-SOLAL. D. IMHOFF and C. SELLA-Int. Conf. Crystal Growth, ICCG4, Tokyo, 1974Google Scholar

Copyright information

© Springer-Verlag 1980

Authors and Affiliations

  • M. Royer
    • 1
  1. 1.Societe Anonyme de TelecommunicationsParisFrance

Personalised recommendations