Stress deformation effects on narrow gap semiconductors

  • M. Averous
Conference paper
Part of the Lecture Notes in Physics book series (LNP, volume 133)


In this lecture, we have reported experimental results obtained by several groups in order to show the effect of uniaxial stress and hydrostatic pressure on zero gap materials (14). It has been seen that the uniaxial compressional stress open the zero gap induced by symmetry; this opening gives effect as well as on the carrier concentration through the density of states, than on the mobility. The hydrostatic pressure, changes the γ68 distance, and consequently as a consequence the shape of the bands, involving a variation of the effective masses, i.e. of the population and the mobility. It has been shown that the transition Semi-metal -Semi-conductor could be induced by the pressure.


Valence Band Hydrostatic Pressure Pressure Dependence Landau Level Hall Coefficient 
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Copyright information

© Springer-Verlag 1980

Authors and Affiliations

  • M. Averous
    • 1
  1. 1.Concordia UniversityMontrealCanada

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