Magnetic properties of narrow gap semiconductors

  • L. A. Falkovskii
Conference paper
Part of the Lecture Notes in Physics book series (LNP, volume 133)


Magnetic properties of narrow-gap semiconductors depend essentially on parameters, which can be varied experimentally. These parameters are the energy gap, temperature, free carrier concentration and magnetic field. For that reason we regard magnetic measurements as an interesting tool in the investigation of these materials.


Landau Level Free Carrier Concentration Cyclotron Mass Landau Diamagnetism Brillouin Zone Edge 
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Copyright information

© Springer-Verlag 1980

Authors and Affiliations

  • L. A. Falkovskii
    • 1
  1. 1.L.D. Landau Institute for Theoretical PhysicsMoscowUSSR

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