Spin-flip Raman scattering and associated X(3) nonlinearities

  • Carl R. Pidgeon
Conference paper
Part of the Lecture Notes in Physics book series (LNP, volume 133)


Intra- and inter-band electronic transitions in semiconductors cause a variety of nonlinear optical processes such as stimulated Raman scattering (SRS), four-photon mixing (FPM), two-photon absorption (TPA), optical saturation and self-focussing, all of which are associated with the third order susceptibility X(3). In particular these effects are strongly enhanced for materials with a small energy gap which form the subject matter of the present work. Because of the close similarity between SRS, FPM and TPA, and because they provide a rather satisfying manifestation of the microscopic physics, I have chosen to concentrate on them as illustrations of nonlinear interactions of radiation with matter. The particular examples chosen are spin-flip Raman scattering and associated FPM, which depend upon an external magnetic field, and zero field TPA, where we have done a new calculation which takes better account of the energy bands involved tha n in previous work.


Stimulate Raman Scattering Nonlinear Optical Process Quantum Threshold Room Temperature Dielectric Constant Effective Mass Equation 
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Copyright information

© Springer-Verlag 1980

Authors and Affiliations

  • Carl R. Pidgeon
    • 1
  1. 1.Department of PhysicsHeriot-Watt UniversityEdinburghUK

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