Skip to main content
SpringerLink
Log in

Radiation effects in silicon charge-coupled devices

  • Chapter
  • First Online:
Charge-Coupled Devices

Part of the book series: Topics in Applied Physics ((TAP,volume 38))

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. B. L. Gregory, C. W. Gwyn: Proc. IEEE 62, 1264 (1974)

    Google Scholar 

  2. F. Larin: Radiation Effects in Semiconductor Devices (Wiley, New York 1968)

    Google Scholar 

  3. R.J.Chaffin: Microwave Semiconductor Devices: Fundantentals and Radiation Effects (Wiley, New York 1973)

    Google Scholar 

  4. C.H.Sequin, A.M.Mohsen: IEEE J. SC-10, 81 (1975)

    Google Scholar 

  5. J. M. Killiany, W. D. Baker: “Limitations of a Threshold-Insensitive CCD Input Technique in a Total Dose Radiation Environment," in 1975 Intern. Conf. Applic. CCDs Proc., pp. 369–374

    Google Scholar 

  6. D. F. Barbe, J. M. Killiany, H. L. Hughes: Appl. Phys. Lett. 23, 400 (1973)

    Google Scholar 

  7. J. M. Killiany, W. D. Baker, N. S. Saks, D. F. Barbe: IEEE Trans. NS-21, No. 6, 193 (1974)

    Google Scholar 

  8. J.E.Carnes, W.F.Kosonocky: Solid State Technol. 17, 67 (1974)

    Google Scholar 

  9. G.A.Hartsell: “Radiation Hardness of Surface and Buried Channel CCDs,” in 1975 Intern. Conf. Applic. CCDs Proc., pp. 375–382

    Google Scholar 

  10. G. A. Hartsell, D. A. Robinson, D. R. Collins: “Effects of Ionizing Radiation on CCDs,” in 1975 Symp. CCD Tech. Sci. Imaging Applic. Proc, pp. 220–227

    Google Scholar 

  11. R. A. Williams, R. D. Nelson: IEEE Trans. NS-22, 2639 (1975)

    Google Scholar 

  12. T. C. May, M. H. Woods: “A New Physikal Mechanism for Soft Errors in Dynamic Memories”, in 1978 Reliability Phys. Symp. Proc., pp. 33–40

    Google Scholar 

  13. J.C.Pickel, J.T.Blandford,Jr: IEEE Trans. NS-25, 1166 (1978)

    Google Scholar 

  14. W. Shedd, B. Buchanan: IEEE Trans. NS-23, 1636 (1976)

    Google Scholar 

  15. G. W. Autio, M. A. Bafico: Infrared Phys. 15, 249 (1975)

    Google Scholar 

  16. A.M. Mohsen, M.F.Tompsett: IEEE Trans. ED-21, 701 (1974)

    Google Scholar 

  17. N. S. Saks, J. M. Killiany, W. D. Baker: “Effects of Neutron Irradiation on the Characteristics of a Buried Channel CCD at 80 and 295 K,” in 1976 NASA-JPL Conf. CCD Tech. Applic. Proc., pp. 110–114

    Google Scholar 

  18. E.C.Smith, D.Binder, P.A.Compton, R.I.Wilbur: IEEE Trans. NS-13, No. 6, 11 (1966)

    Google Scholar 

  19. N.S.Saks: IEEE Trans. NS-24, 2153 (1977)

    Google Scholar 

  20. J. W. Walker, C.T. Sah: Phys. Rev. B7, 4587 (1973)

    Google Scholar 

  21. O.L.Curtis, J.R.Srour: IEEE Trans. NS-20, No. 6, 193 (1973)

    Google Scholar 

  22. H.J.Stein, R.Gereth: J. Appl. Phys. 31, 2890 (1968)

    Google Scholar 

  23. J.R.Srour, S.C.Chen, S.Othmer, R.A.Hartmann: IEEE; Trans. NS-25, 1251 (1978)

    Google Scholar 

  24. O.L.Curtis: IEEE Trans. NS-13, No. 6, 33 (1966)

    Google Scholar 

  25. J. E. Carnes, A. D. Cope, L. R. Rockett: “Effects of Radiation on Charge-coupled Devices,” Final Report, Contract No. RADC-TR-76-285, RCA Laboratories (1976)

    Google Scholar 

  26. C. P.Chang, K. G.Aubuchon: “CCD Radiation Hardening,” Final Report, Contract Number N00173-77-C-0158, Hughes Aircraft Company, Newport Beach, CA June (1978)

    Google Scholar 

  27. S.Mayo, K.F.Galloway, T.F.Leedy: IEEE Trans. NS-23, 1875 (1976)

    Google Scholar 

  28. C.P.Chang: IEEE Trans. NS-25, 1454 (1978)

    Google Scholar 

  29. C.P.Chang: IEEE Trans. NS-23, 1639 (1976)

    Google Scholar 

  30. R.L.Nielsen, D.K.Nichols: IEEE Trans. NS-20, No. 6, 319 (1973)

    Google Scholar 

  31. E. Harari, S. Wang, B. S. H. Royce: J. Appl. Phys. 46, 1310 (1975)

    Google Scholar 

  32. H. E. Boesch, Jr., F. B. McLean, J. M. McGarrity, G. A. Ausman, Jr.: IEEE Trans. NS-22, 2163 (1975)

    Google Scholar 

  33. J. M. Killiany: IEEE Trans. NS-24, 2194 (1977)

    Google Scholar 

  34. J.R.Srour, S.Othmer, S.C.Chen, R.A.Hartman: “Investigation of the Basic Mechanisms of Radiation Effects on Semiconductor Devices Used in Electro-Optical Sensor Applications”, Final Report, Contract Number DNA 001-78-C-0028, Northrop Corporation, Palos Verdes Peninsula, CA, August (1979)

    Google Scholar 

  35. R.C. Hughes: Appl. Phys. Lett. 26, 436 (1975)

    Google Scholar 

  36. J.R.Srour, K.Y.Chiu: IEEE Trans. NS-24, 2141 (1977)

    Google Scholar 

  37. H. F. Boesch, Jr., J. M. McGarrity, F. B. McLean: IEEE Trans. NS-25, 1012 (1978)

    Google Scholar 

  38. J.R. Srour, S.Othmer, O.L.Curtis, Jr., K.Y.Chiu: IEEE Trans. NS-23, 1513 (1976)

    Google Scholar 

  39. N. S. Saks: IEEE Trans. NS-25, 1226 (1978)

    Google Scholar 

  40. H. E. Boesch, Jr., J. M. McGarrity: IEEE Trans. NS-23, 1520 (1976)

    Google Scholar 

Download references

Authors
  1. J. M. Killiany
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

David F. Barbe Ph. D.

Rights and permissions

Reprints and permissions

Copyright information

© 1980 Springer-Verlag

About this chapter

Cite this chapter

Killiany, J.M. (1980). Radiation effects in silicon charge-coupled devices. In: Barbe, D.F. (eds) Charge-Coupled Devices. Topics in Applied Physics, vol 38. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-09832-1_6

Download citation

  • DOI: https://doi.org/10.1007/3-540-09832-1_6

  • Published:

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-09832-4

  • Online ISBN: 978-3-540-38985-9

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation