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References
D. F. Barbe: Proc. IEEE 63, 38 (1975)
D.F. Barbe: IEEE J. SSC-11, 109 (1976)
H. F. Burke, G.J. Michon: IEEE J. SSC-11, 121 (1976)
A. F. Milton, M. Hess: “Series-Parallel Scan I R CID Focal Plane Concept”, in Proc. 1975 Intern. Conf. Application of Charge-Coupled Devices, p.71
R.J. Keyes (ed.): Optical and Infrared Detectors, Topics in Applied Physics, Vol. 19 (Springer, Berlin, Heidelberg, New York 1977) p. 220
R. D. Thom, R. E. Eck, J. D.Phillips, J. B. Scorso: InsSb CCDs and Other MIS Devices for Infrared Applications”, in Proc. 1975 Intern. Conf. Application Charge-Coupled Devices, p. 31
J.C. Kim: “InSb MIS Technology and CID Devices”, in Proc. 1975 Intern. Conf. Application of Charge-Coupled Devices, p. 1
D. Seib: IEEE Trans. ED-21, 210 (1974)
R.K. Willardson, A.C. Beer: “Infrared Detectors”, in Semiconductors and Semimetals, Vol. 5 (Academic Press, New York) p. 27
A.S. Grove: Physics and Technology of Semiconductor Devices (John Wiley and Sons, New York 1967) p. 271
S.M. Sze: Physics of Semiconductor Devices (Wiley-Interscience, New York 1969) p.425
A. F. Tasch, R. A. Chapman, B. H. Breazeale: J. Appl. Phys. 41, 4202 (1970)
R. A. Chapman, M. A. Kinch, A. Simmons, S. R. Borrello. H. B. Morris, J. S. Wrobel, D. D. Buss: Appl. Phys. Lett. 32, 434 (1978)
E. H. Putley: The Hall Effect and Related Phenomena (Butterworth, London 1960) p. 113
J. L. Schmit: J. Appl. Phys. 41, 2876 (1970)
J. L. Schmit, E. L. Stelzer: J. Appl. Phys. 40, 4865 (1969)
M. A. Kinch, S. R. Borrello: Infrared Phys. 15, 111 (1975)
D. K.Schroder, J.Guldberg: Solid-State Electron. 14, 1285 (1971)
J.C.Kim, W.E.Davern, D.Colangelo: “Continued Development of Indium Antimonide CID Arrays”, Final Technical Report on Contract N00173-76-C-0128, General Electric, Syracuse (1977)
W. W. Anderson: Infrared Phys. 17, 147 (1977)
E.O. Kane:“The k · p Method”, in Semiconductors and Semimetals, Vol. 1, ed. by R. K. Willardson, A. C. Beer (Academic Press, New York 1966) p. 75
O.Madelung: Physics of III-V Compounds (John Wiley and Sons, New York 1964)
M. A. Kinch, D. D. Buss: “Far Infrared Cyclotron Resonance in HgCdTe”, in Physics of Semimetals and Narrow Gap Semiconductors, ed. by D. Carter, R. Bate (Pergamon Press, Oxford 1971) p. 461
B. D. McCombe, R. J. Wagner, G. A. Prinz: Phys. Rev. Lett. 25, 87 (1970)
S. H. Groves, T. C. Harman, C. R. Pidgeon: Solid State Commun. 9, 451 (1971)
G. A. Antcliffe, R. T. Bate, R. A. Reynolds: “Oscillatory Magneto resistance from an n-type Inversion Layer with Nonparabolic Bands”, in Physics of Semirnetals and Narrow Gap Semiconductors, ed. by D. Carter, R. Bate (Pergamon Press, Oxford 1971) p.499
D. R. Rhiger, J. D. Langan: “Study of HgCdTe M IS Technology”, Final Technical Report on Contract N00173-76-C-0316, Santa Barbara Research Center, Santa Barbara (1977)
C. Sequin, M. Tompsett: Charge Transfer Devices (Academic Press, New York 1975)
R. J. Strain, N. L. Schryer: Bell System Tech. J. 50, 1721 (1971)
D.B.Scott, S.G. Chamberlain: IEEE Trans. SSC-12,45 (1977)
H.S. Lee, L.G. Heller: IEEE Trans. ED-19, 1270 (1972)
J.E. Carnes, W.F. Kosonocky, E.G. Ramberg: IEEE Trans. SSC-6, 323 (1971)
J. E. Carries, W. F. Kosonocky: RCA Rev. 33, 327 (1972)
M. H. White, D. R. Lampe, F. C. Blaha, I. A. Mack: IEEE Trans. SSC-9, 1 (1974)
J.T. Longo, D.T. Cheung, A.M. Andrews, C.C. Wang, J.M. Tracy: IEEE Trans. ED-25, 213 (1978)
A.J. Steckl: “Injection Efficiency in Hybrid IR CCDs”, in Proc. 1975 Intern. Conf. Application Charge-Coupled Devices, p. 85
N. Bluzer, R.Stehlik: IEEE Trans. ED-25, 160 (1978)
S.P. Emmons T. F.Cheek, J.T. Hall, P. W. Van Atta, R. Balcerak: “A CCD Multiplexer with Forty AC Coupled Inputs”, in Proc. 1975 Intern. Conf. Application Charge-Coupled Devices, p. 43
W.Grant, R.Balcerak, P.Van Atta, J.T.Hall: “Integrated CCD-Bipolar Structure for Focal Plane Processing of I R Signals” in Proc. 1975 Intern. Conf. Application Charge-Coupled Devices, p. 53
I. C. K im, W. E. Davern,, D. Colangelo: Proc. 1976 IEEE Intern. Electron Devices Meeting, p. 550
J. C. Kim: IEEE Trans. ED-25, 232 (1978)
R.D.Thom, F.J.Renda, W.J.Parrish, T.L.Koch: Proc. 1978 IEEE Intern. Electron Devices Meeting, p. 501
E. E. Barrowcliff,L.O. Bubulac,D. T. Cheung,A. M. Andrews,J. D. Blackwell,F. Fox, E. R. Gertner, W. E.Tennant, M.J. Ludowise, L. E. Wood: “Planar GaInSb CCDs”, in Proc. 1978 Intern. Conf. Application of Charge-Coupled Devices, pp. 2–77
D. D. Buss, R. A. Chapman, M. A. Kinch, S. R. Borrello, A. Simmons, C. G. Roberts: Proc. 1978 IEEE; Intern. Electron Devices Meeting, p.496
R.Broudy, M. Rheine: “Advances in Hg CdTe Infrared Focal Plane Technology”, SPIE Proc., Vol. 124 (1977) p. 62 *** DIRECT SUPPORT *** A0024035 00002
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Baker, W.D. (1980). Intrinsic focal plane arrays. In: Barbe, D.F. (eds) Charge-Coupled Devices. Topics in Applied Physics, vol 38. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-09832-1_3
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