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Auger recombination in the electron-hole drops IN Si and Ge

  • Electron-hole Drops
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Book cover Physics of Highly Excited States in Solids

Part of the book series: Lecture Notes in Physics ((LNP,volume 57))

Abstract

Luminescence measurements on Si and Ge at temperatures of about 1.5 K are presented, which indicate that Auger recombination is the main recombination process inside the electron-hole drops (EHD) in both materials. In silicon a broad spectrum near 2 Eg due to Auger- excited hot electrons could be detected. From its intensity, an Auger lifetime can be derived which corresponds to the total EHD lifetime. In germanium, the evaluation of magnetooscillation in the luminescence intensity yields a quantum efficiency of only 25% and leads to the conclusion that 75% of the carriers inside the EHD recombine in Auger processes.

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Authors and Affiliations

  1. Universität Osnabrück, FB 4, 45 Osnabrück, Postfach 4469, Germany

    Klaus Betzler

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  1. Klaus Betzler
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© 1976 Springer-Verlag

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Betzler, K. (1976). Auger recombination in the electron-hole drops IN Si and Ge. In: Physics of Highly Excited States in Solids. Lecture Notes in Physics, vol 57. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-07991-2_91

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  • DOI: https://doi.org/10.1007/3-540-07991-2_91

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-07991-0

  • Online ISBN: 978-3-540-37975-1

  • eBook Packages: Springer Book Archive

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