Abstract
Stimulated photoluminescent spectra of several kinds of layer-type semiconductors, GaSe1-xSx, HgI2 and PbI2 have been measured at liq. N2 and He temperatures.In GaSe, the nonlinear emission may be explained in terms of the Auger-type interactions between the direct exciton and the indirect one with their holes in common in the center of the Brillouin zone. The stimulated photoluminescence due to annihilation of excitonic molecule is found in HgI2 at liq. He temperature. The gain spectrum for the nonlinear emission in 12R-type PbI2 is compared with Haug's model of the exciton-LO-phonon interaction.
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Nishina, Y., Kuroda, N., Yashiro, M., Nakaoka, K., Goto, T. (1976). Stimulated emission in layer-type semiconductors. In: Physics of Highly Excited States in Solids. Lecture Notes in Physics, vol 57. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-07991-2_103
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DOI: https://doi.org/10.1007/3-540-07991-2_103
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