Abstract
Two problems concerning the emission from Si under high-excitation have been investigated: One of them is the near-infrared emission from highly excited Si-surface by a Q-switched ruby laser. Time-resolved emission spectra make clear the electron-hole liquid phase extending uniformly over the crystal surface. The second problem is the far-infrared emission from Si under high-excitation. We observe the emission due to the 2p-ls transitions of the excitons in Si.
This is a preview of subscription content, log in via an institution to check access.
Preview
Unable to display preview. Download preview PDF.
References
J. R. Haynes: Phys. Rev. Letters 17 (1966) 860.
Ya. Pokrovskii: Phys. Status solidi (a) 11 (1972) 385.
J. D. Cuthbert: Phys. Rev. B1 (1970) 1552.
A. S. Kaminskii: Ya. E. Pokrovskii and N. Y. Alkeev, Sov. Phys. JETP 32 (1971) 1048.
M. Kobayashi, Y. Tsuchihashi and S. Narita: Solid State Commun. 15 (1974) 651.
V. S. Vavilov, V. A. Zayats, V. N. Murzin: Proc. 10th Intern. Conf. Phys. Semiconductors, Cambridge 1970 ed. S. P. Keller, J. C. Hensel and F. Stern (NBS, Springfield, Va. 1970) p. 509.
K. L. Shaklee and R. E. Nahory: Phys. Rev. Letters 24 (1970) 942.
W. Kohn and J. M. Luttinger: Phys. Rev. 99 (1955) 915.
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 1976 Springer-Verlag
About this paper
Cite this paper
Kobayashi, M., Narita, S. (1976). Electron-hole drops in silicon. In: Physics of Highly Excited States in Solids. Lecture Notes in Physics, vol 57. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-07991-2_100
Download citation
DOI: https://doi.org/10.1007/3-540-07991-2_100
Published:
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-07991-0
Online ISBN: 978-3-540-37975-1
eBook Packages: Springer Book Archive