Abstract
A crucial problem in the manufacturing of high aspect ratio structures in the microchip production is the collapse of photoresist patterns caused by unbalanced capillary forces. A new concept to reduce the pattern collapse bases on the reduction of the capillary forces by adsorption of a cationic surfactant. The application of a cationic surfactant rinse step in the photolithographic process leads to a reduction of the pattern collapse. Physico-chemical investigations elucidate the mechanism of surfactant adsorption and its effect on the surface properties of the photoresist. It is shown that the best pattern collapse reduction is obtained at a surfactant concentration referring to monolayer coverage. In this concentration range the capillary forces are minimized due to a hydrophobizing of the processed photoresist by adsorbed cationic surfactant.
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Acknowledgments
Financial support for this work provided by the German Federal Ministry of Education and Research (Project No. 01M3154D) and by Infineon Technologies SC300 is gratefully acknowledged. The authors also would like to thank A. Caspari for the zeta potential measurements, B. Pinter, I. Mäge, T. Pearce, M. Voigt for the defect density measurements and the unit process team – resist of Infineon Technologies and J. Kobisch for wafer processing.
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Drechsler, A. et al. The Effect of Adsorbed Cationic Surfactant on the Pattern Collapse of Photoresist Lines in Photolithographic Processes. In: Grundke, K., Stamm, M., Adler, HJ. (eds) Characterization of Polymer Surfaces and Thin Films. Progress in Colloid and Polymer Science, vol 132. Springer, Berlin, Heidelberg. https://doi.org/10.1007/2882_029
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DOI: https://doi.org/10.1007/2882_029
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Publisher Name: Springer, Berlin, Heidelberg
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