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Polyfluorenes for Device Applications

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Polyfluorenes

Part of the book series: Advances in Polymer Science ((POLYMER,volume 212))

Abstract

This article mainly reviews the approaches that have been proposed to improve the device performance of polyfluorene (PF)-based polymer light-emitting diodes (PLEDs). Chemical modifications on main chains, side chains, and chain ends of PFs via the incorporation of charge-transport moieties can reduce the hole- and electron-injection barriers; while physical manipulation on main-chain structures of PFs, poly(9,9-di-n-octylfluorene) (PFO), after dipping in mixed solvent/non-solvent (tetrahydrofuran/methanol) can generate β-phase with extended conjugation length, leading to a promoted charge balance and stable pure blue emission. Hole- and electron-injection barriers can be effectively lowered by the insertion of hole-transport and electron-injection layers, respectively. The recent development of PFs with various emission colors, via physical blending or chemical modification, are presented for a comprehensive understanding of PFs for device applications. The deliberate choice of cathode material with work function matching the lowest unoccupied molecular orbital (LUMO) levels of PFs is another efficient method for increasing electron flux, and is also discussed in this review.

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Authors and Affiliations

  1. Chemical Engineering Department, National Tsing-Hua University, 30013, Hsinchu, Taiwan, Republic of China

    Show-An Chen, Hsin-Hung Lu & Chih-Wei Huang

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  1. Show-An Chen
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  2. Hsin-Hung Lu
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  3. Chih-Wei Huang
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Correspondence to Show-An Chen .

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Ullrich Scherf Dieter Neher

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© 2008 Springer-Verlag Berlin Heidelberg

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Chen, SA., Lu, HH., Huang, CW. (2008). Polyfluorenes for Device Applications. In: Scherf, U., Neher, D. (eds) Polyfluorenes. Advances in Polymer Science, vol 212. Springer, Berlin, Heidelberg. https://doi.org/10.1007/12_2008_144

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