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Integrated Microsystems in Industrial Applications

  • Paddy J. French
Part of the Lecture Notes in Computer Science book series (LNCS, volume 4017)

Abstract

Since the 1960s etching of silicon has been used to make three-dimensional structures. The first devices were pressure sensors using a thin silicon membrane. More recently accelerometers and gyroscopes have been developed. All of these devices can be integrated with electronics enabling the introduction of extra functions such as self-test and self-calibration. A broader look at sensors shows a wealth of integrated devices. The critical issues are reliability and packaging if these devices are to find the applications. A number of silicon sensors have shown great commercial success. This paper will give a brief overview of the technologies and some examples of applications.

Keywords

integrated sensors packaging 

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References

  1. 1.
    Petersen, K.E.: Silicon as a mechanical material. Proc. IEEE 70, 420–457 (1982)CrossRefGoogle Scholar
  2. 2.
    Nathanson, H.C., Wickstrom, R.A.: A resonant-gate silicon surface transistor with high-Q band pass properties. Appl. Phys. Lett. 7, 84 (1965)CrossRefGoogle Scholar
  3. 3.
    Bean, K.E.: Anisotropic etching of silicon. IEEE Trans Electron Devices ED-25, 1185–1193 (1978)CrossRefGoogle Scholar
  4. 4.
    Merlos, A., Acero, M., Bao, M.H., Bauselles, J., Esteve, J.: TMAH/IPA anisotropic etching characteristics. Sensors & Actuators A 37-38, 737–743 (1993)CrossRefGoogle Scholar
  5. 5.
    Howe, R.T., Muller, R.S.: Polycrystalline and amorphous silicon micromechanical beams: annealing and mechanical properties. Sensors and Actuators 4, 447–454 (1983)CrossRefGoogle Scholar
  6. 6.
    Fan, L.-S., Tai, Y.-C., Muller, R.S.: Pin joints, gears, springs, cranks and other novel micromechanical structures. In: Proceedings Transducers 1987, Tokyo, pp. 849–852 (1987)Google Scholar
  7. 7.
    Bartek, M., French, P.J., Wolffenbuttel, R.F.: Planarization in surface micromachining using selective epitaxial growth. In: Proceedings Eurosensors 1994, Toulouse, France, September 26-28, p. 210 (1994)Google Scholar
  8. 8.
    Palik, E.D., et al.: Study of the etch-stop mechanism in silicon. J. Electrochem. Soc. 137, 2051–2059 (1982)CrossRefGoogle Scholar
  9. 9.
    Kloek, B., Colllins, S.D., de Rooij, N.F., Smith, R.L.: Study of electrochemical etch-stop for high precision thickness control of silicon membranes. IEEE Electron Dev. 36, 663–669 (1989)CrossRefGoogle Scholar
  10. 10.
    Sarro, P.M., van Herwaarden, A.W.: Silicon cantilever beams fabricated by electrochemically controlled etching for sensor applications. J. Electrochem. Soc. 133, 1724–1729 (1986)CrossRefGoogle Scholar
  11. 11.
    French, P.J., Nagao, M., Esashi, M.: Electrochemical etch-stop in TMAH without externally applied bias. Sensors & Actuators A 56, 279–280 (1996)CrossRefGoogle Scholar
  12. 12.
    Ashruf, C.M.A., French, P.J., Bressers, P.M.M.C., Sarro, P.M., Kelly, J.J.: A new contactless electrochemical etch-stop based on gold/silicon/TMAH galvanic cell. Sensors & Actuators A 66, 284–291 (1998)CrossRefGoogle Scholar
  13. 13.
    Connolly, E.J., Sakarya, S., French, P.J., Xia, X.H., Kelly, J.J.: A pratical galvanic etch-stop in KOH using sodium hypochlorite. In: Proceedings IEEE MEMS 2003, Kyoto, Japan, January 2003, pp. 566–569 (2003)Google Scholar
  14. 14.
    Ohji, H., Trimp, P.J., French, P.J.: Fabrication of free standing structures using a single step electrochemical etching in hydrofluoric acid. Sensors and Actuators A73, 95–100 (1999)Google Scholar
  15. 15.
    Allen, H.V., Terry, S.C., de Bruin, D.W.: Accelerometer systems with self-testable features. Sensors and Actuators 20, 153–161 (1989)CrossRefGoogle Scholar
  16. 16.
    Rudolf, F., Jornod, A., Bergqvist, J., Leuthold, H.: Precision accelerometers with μg resolution. Sensors and Actuators A21-23, 297–302 (1990)Google Scholar
  17. 17.
    van Kampen, R.P., Vellekoop, M.J., Sarro, P.M., Wolffenbuttel, R.F.: Application of electrostatic feedback to critical damping of an integrated silicon capacitive accelerometer. Sensors and Actuators A43, 100–106 (1994)Google Scholar
  18. 18.
    Burrer, C., Esteve, J.: A novel resonant silicon accelerometer in bulk-micromachining technology. Sensors and Actuators A46-47, 185–189 (1995)Google Scholar
  19. 19.
    Lüdtke, O., Biefeld, V., Buhrdorf, A., Binder, J.: Laterally driven accelerometer fabricated in single crystalline silicon. Sensors and Actuators A82, 149–154 (2000)Google Scholar
  20. 20.
    Li, H., Bao, M., Yang, H., Shen, S., Lu, D.: A micromachined piezoresistive angular rate sensors with a composite beam structure. Sensors and Actuators A 72, 217–223 (1999)Google Scholar
  21. 21.
    Fujita, T., Maenaka, K., Mizuno, T., Matusoka, T., Kojima, T., Oshima, T., Maeda, M.: Disk-shaped bulk micromachined gyroscope with vacuum sealing. Sensors and Actuators A82, 198–204 (2000)Google Scholar
  22. 22.
    Craciun, G., Yang, H., Blauw, M.A., van der Drift, E., French, P.J.: Single step cryogenic SF6/O2 plasma etching process for the development of a novel quad beam gyroscope. In: Proceeding MME 2002, Sinaia, Romania, October 2002, pp. 55–28 (2002)Google Scholar
  23. 23.
    Tanase, D., Goosen, J.F.L., Trimp, P.J., French, P.J.: Multi-parameter sensor system with intravascular navigation for catheter/guide wire application. Sensors and Actuators A 97-98, 116–124 (2002)Google Scholar
  24. 24.
    Kälvesten, E., Smith, L., Tenerz, L., Stemme, G.: The first micromachined pressure sensor for cardiovasular pressure measurements. In: Proceedings MEMS 1998, Heidelberg, Germany, January 25-29, pp. 574–579 (1998)Google Scholar
  25. 25.
    Tsuchiya, T., Kageyama, Y., Funabashi, H., Sakata, J.: Vibrating gyroscope consisting of three layers of polysilicon thin films. In: Proceedings Transducers 1999, Sendai, Japan, June 1999, pp. 976–979 (1999)Google Scholar
  26. 26.
    van Kampen, R.P., Vellekoop, M.J., Sarro, P.M., Wolffenbuttel, R.F.: Application of electrostatic feedback to critical damping of an integrated silicon capacitive accelerometer. Sensors and Actuators 43, 100–106 (1994)CrossRefGoogle Scholar
  27. 27.
    van Oudheusden, B., Huijsing, J.H.: An electronic wind meter based on a silicon flow sensor. Sens. Actuators A 21–23, 420–424 (1990)Google Scholar
  28. 28.
    Makinwa, K.A.A., Huijsing, J.H.: A smart wind sensor using thermal sigma-delta modulation techniques. Sensors and Actuators 97-98, 15–20Google Scholar
  29. 29.
    Bakker, A.: High-accuracy CMOS smart temperature sensors, PhD thesis, TU Delft, The Netherlands (2000), ISBN 90-901-3643-6Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2006

Authors and Affiliations

  • Paddy J. French
    • 1
  1. 1.EI/EWI-DIMESTU DelftDelftThe Netherlands

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