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Fabrication and Characterization of Rare Earth Scandate Thin Films Prepared by Pulsed Laser Deposition

Chapter
Part of the Topics in Applied Physics book series (TAP, volume 106)

Abstract

The continuous structure size reduction in semiconductor technology is leading to a considerable attention for advanced high-κ dielectrics. The rare earth scandates (RE ScO3, where RE is a rare earth element) were recently proposed as candidate materials for the replacement of SiO2 in silicon MOSFETs in either amorphous or epitaxial form. Epitaxial rare earth scandate thin films have been prepared by pulsed laser deposition technique (PLD) on different substrates. Film stoichiometry and quality were investigated by means of Rutherford backscattering spectrometry (RBS), RBS channelling, high-resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD). Electrical measurements on MIM-structures show a high dielectric constant of around 20 and low leakage currents.

Keywords

71.55.-i; 72.80.Sk; 73.20.At; 75.47.Lx; 77.55.+f 

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References

  1. International technology roadmap for semiconductors: (2004) Google Scholar
  2. D. G. Schlom, J. H. Haeni: A thermodynamic approach to selecting alternative gate dielectrics, MRS Bull. 27, 198 (2002) Google Scholar
  3. G. D. Wilk, R. M. Wallace, J. M. Anthony: High-κgate dielectrics: current status and materials properties considerations, J. Appl. Phys. 89, 5243 (2001) CrossRefGoogle Scholar
  4. J. Fröhlingsdorf, W. Zander, B. Stritzker: Direct preparation of high-T-superconducting films by laser ablation, Solid State Commun. 67, 965 (1988) CrossRefGoogle Scholar
  5. J. Lettieri: Critical Issues of Complex, Epitaxial Oxide Growth and Integration with Silicon by Molecular Beam Epitaxy, Ph.D. thesis, Pennsylvania State University (2002) Google Scholar
  6. R. A. McKee, F. J. Walker, J. R. Conner, E. D. Specht, D. E. Zelmon: Molecular beam epitaxy growth of epitaxial barium silicide, barium oxide, and barium titanate on silicon, Appl. Phys. Lett. 59, 782 (1991) CrossRefGoogle Scholar
  7. H. J. Osten, E. Bugiel, O. Kirfel, M. Czernohorsky, A. Fissel: MBE growth and properties of epitaxial metal oxides for high-κdielectrics, J. Cryst. Growth 278, 18 (2005) CrossRefGoogle Scholar
  8. D. Dijkkamp, T. Venkatesan, X. D. Wu, S. A. Shaheen, N. Jisrawi, Y. H. Min-Lee, W. L. McLean, M. Croft: Preparation of --oxide superconductor thin films using pulsed laser evaporation from high Tbulk material, Appl. Phys. Lett. 51, 619 (1987) CrossRefGoogle Scholar
  9. B. Roas, L. Schultz, G. Endres: Epitaxial growth of 2Cu3O7-thin films by a laser evaporation process, Appl. Phys. Lett. 53, 1557 (1988) CrossRefGoogle Scholar
  10. D. B. Chrisey, G. K. Hubler: Pulsed Laser Deposition of Thin Films (Wiley, New York 1984) Google Scholar
  11. J. H. Haeni: Nanoengineering of Ruddlesden–Popper phases using molecular beam epitaxy, Ph.D. thesis, Pennsylvania State University (2002) Google Scholar
  12. J. Schubert, O. Trithaveesak, A. Petraru, C. L. Jia, R. Uecker, P. Reiche, D. G. Schlom: Structural and optical properties of epitaxial 3 thin films grown on 3(110), Appl. Phys. Lett. 82, 3460 (2003) CrossRefGoogle Scholar
  13. C. Zhao, T. Witters, B. Brijs, H. Bender, O. Richard, M. Caymax, T. Heeg, J. Schubert, V. V. Afanas'ev, A. Stesmans, D. G. Schlom: Ternary rare-earth metal oxide high-k layers on silicon oxide, Appl. Phys. Lett. 86, 132903 (2005) CrossRefGoogle Scholar
  14. V. V. Afanas'ev, A. Stesmans, C. Zhao, M. Caymax, T. Heeg, J. Schubert, Y. Jia, D. G. Schlom, G. Lucovsky: Band alignment between (100)and complex rare earth/transition metal oxides, Appl. Phys. Lett. 85, 5917 (2004) CrossRefGoogle Scholar
  15. J. R. Hauser, K. Ahmed: Characterization of ultra-thin oxides using electrical C–V and I–V measurements, AIP Conf. Proc. 449, 235 (1998) Google Scholar

Authors and Affiliations

  1. 1.Institute of Thin Films and Interfaces, ISG1-IT and Center of Nanoelectronic Systems for Information Technology, CNIResearch Center JülichJülichGermany

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