Growth of Oxides with Complex Stoichiometry by the ALD Technique, Exemplified by Growth of La1–xCaxMnO3

Part of the Topics in Applied Physics book series (TAP, volume 106)


To grow films with a complex stoichiometry by the ALD approach has long been regarded as a complicated task and hitherto not pursued to a large extent. This review will cover some of the milestones on the way to controlled deposition of compounds with intricate stoichiometry with the ALD technique. The survey shows that some of the foreseen obstacles might not necessarily be that severe. The growth of films of La1–x Ca x MnO3 will be used as a model to describe the process for growth of oxides with complex composition, and a mathematical model to predict the deposited stoichiometry is advanced. It is shown that the ALD window found for deposition of MnO2 is extended to higher temperatures when Ca and/or La is present on the film surface.


71.55.-i; 72.80.Sk; 73.20.At; 75.47.Lx; 77.55.+f 


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Authors and Affiliations

  1. 1.Department of ChemistryUniversity of OsloOsloNorway

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