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Models for ALD and MOCVD Growthof Rare Earth Oxides

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Rare Earth Oxide Thin Films

Part of the book series: Topics in Applied Physics ((TAP,volume 106))

Abstract

Atomic layer deposition (ALD) and metal organic chemical vapour deposition (MOCVD) are suitable techniques for the controlled deposition of high-quality oxide films. Increasingly, modelling is being used to complement deposition experiments, and a brief overview of modelling approaches is presented here. The main focus is on atomic-scale models using ab initio electronic structure theory to investigate the reaction steps involved in growth, in particular precursor adsorption and elimination of by-products. The common water-based ALD process is considered, using simulations of the ALD of alumina from trimethylaluminium and water as a specific example. In addition, analytical models of film growth are reviewed. Finally, models for gas transport within the reactor are presented, with the possibility of incorporating feature-scale and atomic-scale descriptions as well.

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Authors and Affiliations

  1. Tyndall National Institute, University College, Lee Maltings, Prospect Row, Cork, Ireland

    Simon D. Elliott

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  1. Simon D. Elliott
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Marco Fanciulli Giovanna Scarel

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Elliott, S.D. Models for ALD and MOCVD Growthof Rare Earth Oxides. In: Fanciulli, M., Scarel, G. (eds) Rare Earth Oxide Thin Films. Topics in Applied Physics, vol 106. Springer, Berlin, Heidelberg . https://doi.org/10.1007/11499893_5

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