Rare Earth Oxides Grown by Molecular Beam Epitaxy for Ultimate Scaling

Part of the Topics in Applied Physics book series (TAP, volume 106)


Combination of lanthanum and other rare earth oxides with HfO2 yields stable compounds which withstand transistor processing and have low gate leakage and negligible threshold voltage instabilities. This could make these compounds good candidates for future low-operating power transistors with high-k gates, although they may not be suitable for aggressive scaling of Si-based devices due to rather high equivalent oxide thickness. On the other hand, rare earth oxides could share a good role in future nanoelectronics as part of the gate stack in high-mobility Ge and III–V compound semiconductor MOSFETs. Several of the rare earth oxides could easily change their oxidation state so that they could promote catalytic reactions to effectively passivate semiconductor surfaces and improve the electrical characteristics of devices.


71.55.-i; 72.80.Sk; 73.20.At; 75.47.Lx; 77.55.+f 


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Authors and Affiliations

  1. 1.MBE Laboratory, Institute of Materials ScienceNational Center for Scientific Research – DEMOKRITOSAthensGreece

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