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Requirements of Oxides as Gate Dielectricsfor CMOS Devices

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Book cover Rare Earth Oxide Thin Films

Part of the book series: Topics in Applied Physics ((TAP,volume 106))

Abstract

Analysis of fundamental material properties of the d-electron-based high-k dielectrics, which are under consideration for the application as gate dielectrics, indicates that this class of materials has serious limitations. However, the material intrinsic properties do not necessarily have to satisfy all performance requirements: certain properties can be modified by proper engineering. We formulate a technological approach to the requirements for gate dielectrics, which is specific to a given class of materials and aims to address negative aspects of intrinsic material properties.

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Authors and Affiliations

  1. SEMATECH, 2706 Montropolis Drive, 78741, Austin, Texas, USA

    Gennadi Bersuker & Peter Zeitzoff

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  1. Gennadi Bersuker
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  2. Peter Zeitzoff
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Marco Fanciulli Giovanna Scarel

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Bersuker, G., Zeitzoff, P. Requirements of Oxides as Gate Dielectricsfor CMOS Devices. In: Fanciulli, M., Scarel, G. (eds) Rare Earth Oxide Thin Films. Topics in Applied Physics, vol 106. Springer, Berlin, Heidelberg . https://doi.org/10.1007/11499893_21

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  • DOI: https://doi.org/10.1007/11499893_21

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-35796-4

  • Online ISBN: 978-3-540-35797-1

  • eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)

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