Scientific and Technological Issues Related to Rare Earth Oxides: An Introduction

Part of the Topics in Applied Physics book series (TAP, volume 106)


Significant research effort is currently being devoted to study deposition, dielectric, and electronic properties of binary rare earth oxides, as well as of complex oxides based on rare earth elements. Most of the motivations justifying this effort are found in the field of microelectronics – especially in the search of high dielectric constant oxides as candidates to substitute SiO2 – and these will be mostly discussed. Open problems and issues from the scientific and technological point of view are discussed, and applications in fields other than microelectronics (such as spintronics) are also mentioned.


71.55.-i; 72.80.Sk; 73.20.At; 75.47.Lx; 77.55.+f 


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  1. L. Petit, A. Svane, Z. Szotek, W. M. Temmerman: First principles study of rare-earth oxides, Phys. Rev. B Google Scholar
  2. W. M. Temmerman, Z. Szotek, A. Svane, P. Strange, H. Winter, A. Delin, B. Johansson, O. Eriksson, L. Fast, J. M. Wills: Electronic configuration of ytterbium compounds, Phys. Rev. Lett. 83, 3900 (1999) CrossRefGoogle Scholar
  3. M. Horne, P. Strange, W. M.Temmerman, Z. Szotek, A. Svane, H. Winter: The electronic structure of europium chalcogenides and pnictides, J. Phys. Condens. Matter 16, 5061 (2004) CrossRefGoogle Scholar
  4. A. Svane, V. Kanchana, G. Vaitheeswaran, G. Santi, W. M. Temmerman, Z. Szotek, P. Strange, L. Petit: Electronic structure of samarium monopnictides and monochalcogenides, Phys. Rev. B 71, 45119 (2005) CrossRefGoogle Scholar
  5. P. Villars, L. D. Calvert: Pearson's handbook of crystallographic data for intermetallic phases, 2 ed. (ASM International, Ohio 1991) Google Scholar
  6. J. M. Leger, N. Yacoubi, J. Loriers: Synthesis of rare earth monoxides, J. Sol. State Chem. 36, 1981 (1981) CrossRefGoogle Scholar
  7. Y. Sakabe, Y. Hamaji, H. Sano, N. Wada: Effects of rare-earth oxides on the reliability of X7R dielectrics, Jpn. J. Appl. Phys. 41, 5668 (2002) CrossRefGoogle Scholar
  8. G. D. Wilk, R. M. Wallace, J. M. Anthony: High-κgate dielectrics: current status and materials properties, J. Appl. Phys. 89, 5243 (2001) CrossRefGoogle Scholar
  9. D. G. Schlom, J. H. Haeni: A thermodynamic approach to selecting alternative gate deielctrics, MRS Bull. 27, 198 (2002) Google Scholar
  10. J. P. Liu, P. Zaumseil, E. Bugiel, H. J. Osten: Epitaxial growth of Pr2O3 on Si(111) and the observation of a hexagonal to cubic phase transition during post-growth N2 annealing, Appl. Phys. Lett. 79, 671 (2001) CrossRefGoogle Scholar
  11. M. Hong, J. Kwo, A. R. Kortan, J. P. Mannaerts, A. M. Sergent: Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation, Science 283, 1897 (1999) CrossRefGoogle Scholar
  12. V. Narayanan, S. Guha, M. Copel, N. A. Bojarczuk, P. L. Flaitz, M. Gribelyuk: Interfacial oxide formation and oxygen diffusion in rare earth oxide – silicon epitaxial heterostructures, Appl. Phys. Lett. 81, 4183 (2002) CrossRefGoogle Scholar
  13. S. Stemmer: Thermodynamic considerations in the stability of binary oxides for alternative gate dielectrics in complementary metal-oxide-semiconductors, J. Vac. Sci. Technol. B 22, 791 (2004) CrossRefGoogle Scholar
  14. L. Marsella, V. Fiorentini: Structure and stability of rare-earth and transition-metal oxides, Phys. Rev. B 69, 172103 (2004) CrossRefGoogle Scholar
  15. G. Scarel, E. Bonera, C. Wiemer, G. Tallarida, S. Spiga, M. Fanciulli, I. Fedushkin, H. Schumann, Y. Lebedinskii, A. Zenkevich: Atomic layer deposition of Lu203, Appl. Phys. Lett. 85, 630 (2004) CrossRefGoogle Scholar
  16. M. Malvestuto, G. Scarel, C. Wiemer, M. Fanciulli, F. D'Acapito, F. Boscherini: X-ray absorption spectroscopy study of Yb203 and Lu203 thin films deposited on Si(100) by atomic layer deposition, Nuc. Instr. Method. B 246, 90 (2006) CrossRefGoogle Scholar
  17. H. Schumann, I. Fedushkin, M. Hummert, G. Scarel, E. Bonera, M. Fanciulli: Crystal and molecular structure of [(η 5-c5h4sime3)2lucl]2 – suitable precursor for Lu203 films, Z. Naturforsch. 59b, 1035 (2004) Google Scholar
  18. M. F. Fischetti, D. A. Neumayer, E. A. Cartier: Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-κ insulator: the role of remote phonon scattering, J. Appl. Phys. 90, 4587 (2001) CrossRefGoogle Scholar
  19. N. V. Skorodumova, S. I. Simak, B. I. Lundqvist, I. A. Abrikosov, B. Johansson: Quantum origin of the oxygen storage capability of ceria, Phys. Rev. Lett. 89, 166601 (2002) CrossRefGoogle Scholar
  20. J. Lettieri, V. Vaithyanathan, S. K. Eah, J. Stephens, V. Sih, D. D. Awschalom, J. Levy, D. G. Schlom: Epitaxial growth and magnetic properties of EuO on (001) Si by molecular-beam epitaxy, Appl. Phys. Lett. 83, 975 (2003) CrossRefGoogle Scholar
  21. A. V. Prokofiev, A. I. Shelyakh, B. T. Melekh: Periodicity in the band gap variation of Ln2X3 (X = O, S, Se) in the lanthanide series, J. All. Comp. 242, 41 (1996) CrossRefGoogle Scholar
  22. H. B. Lal, K. Gaur: Electrical conduction in non-metallic rare-earth solids, J. Mater. Sci. 23, 919 (1988) CrossRefGoogle Scholar
  23. I. A. Bersuker: Electronic Structure and Properties of Transition Metal Compounds (Wiley 1996) Chap. 7 Google Scholar
  24. G. Lucovsky, Y. Zhang, G. B. Rayner, G. Appel, H. Ade, J. L. Whitten: Electronic structure of high-transition metal oxides and their silicate and aluminate alloys, J. Vac. Sci. Technol. B 20, 1739 (2002) CrossRefGoogle Scholar
  25. G. Lucovsky, J. P. Maria, J. C. Phillips: Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. II. Strain-relief at internal dielectric interfaces between SiO2 and alternative gate dielectrics, J. Vac. Sci. Technol. B 22, 2097 (2002) CrossRefGoogle Scholar
  26. G. Seguini, E. Bonera, S. Spiga, G. Scarel, M. Fanciulli: Energy-band diagram of metal/Lu203/silicon structures, Appl. Phys. Lett. 85, 5316 (2004) CrossRefGoogle Scholar
  27. J. Dabrowski, V. Zavodinsky, A. Fleszar: Pseudopotential study of PrO2 and HfO2 in fluorite phase, Microelectron. Rel. 41, 1093 (2001) CrossRefGoogle Scholar
  28. L. Hedin: On the correlation effects in electron spectroscopies and the GW approximation, J. Phys. Condens. Matter 11, R489 (1999) CrossRefGoogle Scholar
  29. J. Robertson: Electronic structure and band-offsets of high-dielectric-constant gate oxides, MRS Bull. 27, 217 (2002) Google Scholar
  30. V. V. Afanas'ev, A. Stesmans, F. Chen, X. Shi, S. A. Campbell: Internal photoemission of electrons and holes from (100)Si into HfO2, Appl. Phys. Lett. 81, 1053 (2002) CrossRefGoogle Scholar
  31. H. J. Osten, J. P. Liu, H. J. Müssig: Band gap and band discontinuities at crystalline Pr2O3/Si(001) heterojunctions, Appl. Phys. Lett. 80, 297 (2002) CrossRefGoogle Scholar
  32. Y. Nishikawa, T. Yamaguchi, M. Yoshiki, H. Satake, N. Fukushima: Interfacial properties of single crystalline CeO2 high-gate dielectrics directly grown on Si(111), Appl. Phys. Lett. 81, 4386 (2002) CrossRefGoogle Scholar
  33. V. A. Rozhkov, A. Y. Trusova: Energy barriers at the interfaces in the MIS system Me–Yb2O3–Si, Tech. Phys. 44, 404 (1999) CrossRefGoogle Scholar
  34. T. Hattori, T. Yoshida, T. Shiraishi, K. Takahashi, H. Nohira, S. Joumori, K. Nakajima, M. Suzuki, K. Kimura, I. Kashiwagi, C. Ohshima, S. Ohmi, H. Iwai: Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) interfacial transition layer, Microel. Eng. 72, 283 (2004) CrossRefGoogle Scholar
  35. E. Bonera, G. Scarel, M. Fanciulli, P. Delugas, V. Fiorentini: Dielectric properties of high-κoxides: Theory and Experiment for Lu2O3, Phys. Rev. Lett. 94, 27602 (2005) CrossRefGoogle Scholar
  36. G. V. Samsonov, I. Y. Gil'man: Electronic structure and physical properties of the oxides of the lanthanides, Soviet Powder Metallurgy and Metal Ceramics 13, 925 (1974) CrossRefGoogle Scholar
  37. P. Delugas, V. Fiorentini: Dielectric properties of the two phases of crystalline lutetium oxide, Microelectron. Rel. 45, 831 (2005) CrossRefGoogle Scholar
  38. S. Ohmi, C. Kobayashi, I. Kashiwagi, C. Ohshima, H. Ishiwara, H. Iwai: Characterization of La2O3 and Yb2O3 thin films for high-k gate insulator application, J. Electrochem. Soc. 150, F134 (2003) CrossRefGoogle Scholar
  39. H. Yamada, T. Shimizu, A. Kurokawa, K. Ishii, E. Suzuki: MOCVD of high-dielectric-constant lanthanum oxide thin films, J. Electrochem. Soc. 150, G429 (2003) CrossRefGoogle Scholar
  40. A. Fissel, H. J. Osten, E. Bugiel: Towards understanding epitaxial growth of alternative high-dielectrics on Si(001): Application to praseodymium oxide, J. Vac. Sci. Technol. B 21, 1765 (2003) CrossRefGoogle Scholar
  41. K. Kukli, M. Ritala, T. Pilvi, T. Sajavaara, M. Leskelä, A. C. Jones, H. C. Aspinall, D. G. Gilmer, P. J. Tobin: Evaluation of a praseodymium precursor for atomic layer deposition of oxide dielectric films, Chem. Mater. 16, 5162 (2004) Google Scholar
  42. L. Tye, N. A. El-Masry, T. Chikyow, P. McLarty, S. M. Bedair: Electrical characteristics of epitaxial CeO2 on Si(111), Appl. Phys. Lett. 65, 3081 (1994) CrossRefGoogle Scholar
  43. T. R. Griffiths, M. J. Davies, H. V. S. A. Hubbard: Spectroscopic studies on single crystals having the fluorite lattics, J. Chem. Soc. Faraday Trans. II 4, 765 (1976) CrossRefGoogle Scholar
  44. A. A. Dakhel: Characterisation of Nd2O3 thick gate dielectric for silicon, Phys. Stat. Sol. (a) 201, 745 (2004) CrossRefGoogle Scholar
  45. J. Päiväsaari, M. Putkonen, L. Niinistö: A comparative study on lanthanide oxide thin films grown by atomic layer deposition, Thin Solid Films 472, 275 (2005) CrossRefGoogle Scholar
  46. A. A. Dakhel: Dielectric and optical properties of samarium oxide thin films, J. All. Comp. 365, 233 (2004) CrossRefGoogle Scholar
  47. P. Watcher: Europium Chalcogenides: EuO, EuS, EuSe, and EuTe, in K. A. Gschneider, Jr., L. Eyring (Eds.): Handbook on the Physics and Chemistry of Rare Earths Google Scholar
  48. J. Kwo, M. Hong, B. Busch, D. A. Muller, Y. J. Chabal, A. R. Kortan, J. P. Mannaerts, B. Yang, P. Ye, H. Grossmann, A. M. Sergent, K. K. Ng, J. Bude, W. H. Schulte, E. Garfunkel, T. Gustafsson: International conference on molecular beam epitaxy (cat. no. 02ex607), in (2002) p. 47 Google Scholar
  49. D. Landheer, J. A. Gupta, G. I. Sproule, J. P. McCaffrey, M. J. Graham, K.-C. Yang, Z.-H. Lu, W. N. Lennard: Characterization of Gd2O3 films deposited on Si(100) by electron-beam evaporation, J. Electrochem. Soc. 148, G29 (2001) CrossRefGoogle Scholar
  50. M. P. Singh, C. S. Thakur, K. Shalini, S. Banerjee, N. Bhat, S. A. Shivashankar: J. Appl. Phys. 96, 5631 (2004) CrossRefGoogle Scholar
  51. V. Mikhelashvili, G. Eisenstein, F. Edelman, R. Brener, N. Zakharov, P. Werner: Structural and electrical properties of electron beam gun evaporated Er2O3 insulator thin films, J. Appl. Phys. 95, 613 (2004) CrossRefGoogle Scholar
  52. T. Zdanovicz, L. Zdanowicz: Preparation and some electrical properties of thulium oxide films, Thin Solid Films 58, 390 (1979) CrossRefGoogle Scholar
  53. S. Ohmi, M. Takeda, H. Ishiwara, H. Iwai: Electrical characteristics for Lu2O3 thin films fabricated by e-beam deposition method, J. Electrochem. Soc. 151, G279 (2004) CrossRefGoogle Scholar
  54. R. D. Shannon: Dielectric polarizabilities of ions in oxides and fluorides, J. Appl. Phys. 73, 348 (1993) CrossRefGoogle Scholar
  55. S. Jeon, H. Hwang: Effect of hygroscopic nature on the electrical characteristics of lanthanide oxides (Pr2O3, Sm2O3, Gd2O3, and Dy2O3), J. Appl. Phys. 93, 6393 (2003) CrossRefGoogle Scholar
  56. B. B. Van Aken, T. T. M. Palstra: Influence of magnetic on ferroelectric ordering in LuMnO3, Phys. Rev. B 69, 134113 (2004) CrossRefGoogle Scholar

Authors and Affiliations

  1. 1.CNR-INFM MDMNational LaboratoryAgrate Brianza (MI)Italy
  2. 2.Department of Physics and AstronomyUniversity of ÅårhusÅårhusDenmark

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