Band Edge Electronic Structure of Transition Metal/Rare Earth Oxide Dielectrics

Part of the Topics in Applied Physics book series (TAP, volume 106)


This Chapter discusses band edge electronic structure of 1. nanocrystalline elemental and complex oxide high-k dielectrics, and 2. non-crystalline Zr and Hf silicates, and Si oxynitride alloys. Experimental approaches include X-ray absorption spectroscopy, photoconductivity, and visible/vacuum ultra-violet and spectroscopic ellipsomentry. These measurements are complemented by Fourier transform infra-red absorption, X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and X-ray diffraction. Three issues are highlighted: Jahn–Teller term splittings that remove band edge d-state degeneracies in nanocrystalline films, intrinsic bonding defects in ZrO2 and HfO2, and chemical phase separation and crystallinity in Zr and Hf silicate and Si oxynitride alloys.


71.55.-i; 72.80.Sk; 73.20.At; 75.47.Lx; 77.55.+f 


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Authors and Affiliations

  1. 1.Department of PhysicsNorth Carolina State UniversityRaleigh, North CarolinaUSA

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