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Band Edge Electronic Structure of Transition Metal/Rare Earth Oxide Dielectrics

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Rare Earth Oxide Thin Films

Part of the book series: Topics in Applied Physics ((TAP,volume 106))

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Abstract

This Chapter discusses band edge electronic structure of 1. nanocrystalline elemental and complex oxide high-k dielectrics, and 2. non-crystalline Zr and Hf silicates, and Si oxynitride alloys. Experimental approaches include X-ray absorption spectroscopy, photoconductivity, and visible/vacuum ultra-violet and spectroscopic ellipsomentry. These measurements are complemented by Fourier transform infra-red absorption, X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and X-ray diffraction. Three issues are highlighted: Jahn–Teller term splittings that remove band edge d-state degeneracies in nanocrystalline films, intrinsic bonding defects in ZrO2 and HfO2, and chemical phase separation and crystallinity in Zr and Hf silicate and Si oxynitride alloys.

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Authors and Affiliations

  1. Department of Physics, North Carolina State University, 27695-8202, Raleigh, North Carolina, USA

    Gerald Lucovsky

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  1. Gerald Lucovsky
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Marco Fanciulli Giovanna Scarel

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Lucovsky, G. Band Edge Electronic Structure of Transition Metal/Rare Earth Oxide Dielectrics. In: Fanciulli, M., Scarel, G. (eds) Rare Earth Oxide Thin Films. Topics in Applied Physics, vol 106. Springer, Berlin, Heidelberg . https://doi.org/10.1007/11499893_17

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  • DOI: https://doi.org/10.1007/11499893_17

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-35796-4

  • Online ISBN: 978-3-540-35797-1

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