Abstract
In the nearest future, a dielectric with a dielectric constant k several times higher than that of SiO2 will be needed for the fabrication of CMOS (Complementary Metal-Oxide-Semiconductor) devices. Numerous metal oxides and silicates are investigated as candidates and various deposition and annealing techniques are being developed to improve the film quality. These techniques try to utilize the effects attributed to alloying, incorporation of nitrogen, gettering of oxygen, etc. At the same time, the basic knowledge on the microscopic properties of these materials needs improvement, particularly in the case of rare-earth oxides.
We present our fundamental understanding of point defects in Pr-based dielectrics (PrO1.5, PrO2, PrO1.75+delta, and PrSiO3.5) in the context of their influence on the electrical properties of the Metal Oxide Semiconductor (MOS) stack. From this point of view, there are three major issues associated with the presence of point defects: bulk charge traps, Trap Assisted Tunneling (TAT) centers, and electrically active interface states. The paper focuses on the first of these issues, as seen from the perspective of ab initio total energy calculations for atomic and electronic structures of point defects. We discuss the dependence of point defect formation on the chemical potential of oxygen and the role of impurities such as moisture, silicon, and boron. In particular, we derive a model of Si-related fixed charge and argue that this model is valid also for typical high-k dielectrics and for thermal SiO2/Si films.
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M. Bockstedte, A. Kley, J. Neugebauer, M. Scheffler: Density-functional theory calculations for poly-atomic systems: Electronic structure, static and elastic properties and ab initio molecular dynamics, Comp. Phys. Comm. 107, 187 (1997)
A. Fissel, J. D, H. J. Osten: Photoemission and ab initio theoretical study ot interface and film formation during epitaxial growth and annealing of praseodymium oxide on (001), J. Appl. Phys. 91, 8986 (2002)
D. M. Ceperley, B. J. Alder: Ground state of the electron gas by the stochastic method, Phys. Rev. Lett. 45, 567 (1980)
J. P. Perdew, A. Zunger: Self-interaction correction to density-functional approximation for many-electron systems, Phys. Rev. B 23, 5048 (1981)
D. R. Haman: Generalized norm-conserving pseudopotentials, Phys. Rev. B 40, 2980 (1989)
G. B. Bachelet, D. R. Hamann, M. A. Schlüter: Pseudopotentials that work: From to , Phys. Rev. B 26, 4199 (1982)
H.-J. Müssig, H. J. Osten, E. Bugiel, J. D, A. Fissel, T. Guminskaya, K. Ignatovich, J. P. Liu, B. P. Zaumsei, V. Zavodinsky: Epitaxial praseodymium oxide: A new high-k dielectric, in Proc. 2001 IEEE Integrated Reliability Workshop (South Lake Tahoe, CA (USA) 2001) p. 1
J. D, V. Zavodinsky, A. Fleszar: Pseudopotential study of 2 and 2 in fluorite phase, Microelectron. Reliab. 41, 1093 (2001)
H. Bergman: Gmelin Handbuch der Anorganischen Chemie, Seltenerdelemente, Teil C1 (Springer, Berlin, Heidelberg 1974)
D. R. Lide (Ed.): Handbook of Chemistry and Physics, 73 ed. (CRC Press, Boca Raton, FL (USA) 1993–1994)
N. F. Mott: Charged defects in vitreous silica, J. Non-Cryst. Solids 40, 1 (1980)
G. N. Greaves: Intrinsic and modified defect states in silica, J. Non-Cryst. Solids 32, 295 (1979)
G. Lucovsky: Spectroscopic evidence for valence-alternation-pair defect states in vitreous 2, Phil. Mag. B 39, 513 (1979)
E. P. O'Reilly, J. Robertson: Theory of defects in vitreous silicon dioxide, Phys. Rev. B 27, 3780 (1983)
S. T. Pantelides, R. Buczko, M. Rammamoorthy, S. Rashkeev, G. Duscher, S. J. Pennycook: Local and global bonding at the -SiO2 interface, in Y. J. Chabal (Ed.): Fundamental Aspects of Silicon Oxidation (Springer, Berlin, Heidelberg 2001) p. 107
H. Inaba, K. Naito: Simultaneous measurements of oxygen pressure, composition, and electrical conductivity of praseodymium oxides: I. 7O12 and 9O16 phases, J. Solid State Chem. 50, 100 (1983)
G. V. Subba Rao, S. Ramdas, P. N. Mehrotra, C. N. R. Rao: Electrical transport in rare-earth oxides, J. Solid State Chem. 2, 377 (1970)
H. Lakhadari, D. Vuillaume, J. C. Bourgoin: Spatial and energetic distributions of -SiO2 near-interface states, Phys. Rev. B 38, 13124 (1988)
D. Vuillaume, J. C. Bourgoin, M. Lannoo: Oxide traps in -SiO2 structures characterized by tunnel emission with deep-level transient spectroscopy, Phys. Rev. B 34, 1171 (1986)
G. Lippert, J. D, V. Melnik, R. Sorge, C. Wenger, P. Zaumseil, H.-J. Müssig: segregation into 2O3 and 2O3 high-k gate oxides, Appl. Phys. Lett. 86, 042902 (2005)
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Da̧browski, J., Fleszar, A., Lippert, G., Lupina, G., Mane, A., Wenger, C. Charge Traps in High-k Dielectrics: Ab Initio Study of Defects in Pr-Based Materials. In: Fanciulli, M., Scarel, G. (eds) Rare Earth Oxide Thin Films. Topics in Applied Physics, vol 106. Springer, Berlin, Heidelberg . https://doi.org/10.1007/11499893_15
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DOI: https://doi.org/10.1007/11499893_15
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