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Electrical Characterization of Rare Earth Oxides Grown by Atomic Layer Deposition

Chapter
Part of the Topics in Applied Physics book series (TAP, volume 106)

Abstract

In this contribution, we investigate the electrical properties of thin (3–30 nm) Lu2O3 and Yb2O3 oxides grown on silicon by atomic layer depostion. Precursors with various ligands (e.g., cyclopentadienyls, or β-diketonates) are used as metal source, while water or ozone are used as oxygen source. Lu2O3 and Yb2O3 films exhibit a dielectric constant (κ) of 11± 1 and 10± 1, respectively. For both rare earth oxides, a low κ interlayer (IL) is formed at the film/silicon interface. Gate stacks with capacitance equivalent oxide thickness (CET) down to 3 nm exhibit low leakage current and well-shaped capacitance–voltage curves without frequency dispersion of the accumulation capacitance. A CET of 2.7± 0.1 nm and leakage of 4.5 × 10–4 A cm–2 were measured for the thinnest (3.5 nm) Lu2O3/IL/Si gate stack, and a CET of 3.3 ± 0.1 nm and leakage of 1 × 10–4 Acm–2 for the (4.5 nm) Yb2O3/IL/Si one. The lowest interface trap density (D it), measured for film grown using water, is in the 1011 eV–1cm–2 range for both rare earth oxides. Films grown using ozone exhibit a D it in the 1012 eV–1cm–2 range. The microscopic structure of the electrically active defects is investigated using magnetic resonance spectroscopy.

Keywords

71.55.-i; 72.80.Sk; 73.20.At; 75.47.Lx; 77.55.+f 

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Authors and Affiliations

  1. 1.CNR-INFM MDM National LaboratoryAgrate Brianza (MI)Italy

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