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Strain-Relief at Internal Dielectric Interfaces in High-k Gate Stacks with Transition Metal and Rare Earth Atom Oxide Dielectrics

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Rare Earth Oxide Thin Films

Part of the book series: Topics in Applied Physics ((TAP,volume 106))

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Abstract

This Chapter addresses the effects of bonding discontinuities at the internal dielectric interfaces in gate stacks that include transition metal and rare earth atom elemental and complex oxides, as well as transition metal silicate alloys. The focus is on the strain-induced defects, and the reduction of defect densities through strain-driven self-organizations that take place during high-temperature post-deposition annealing.

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Authors and Affiliations

  1. Department of Physics, North Carolina State University, Raleigh, 27695-8202, North Carolina, USA

    Gerald Lucovsky

  2. Department of Physics, Rutgers University, Piscataway, 08854, New Jersey, USA

    James C. Phillips

Authors
  1. Gerald Lucovsky
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  2. James C. Phillips
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Marco Fanciulli Giovanna Scarel

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Lucovsky, G., Phillips, J.C. Strain-Relief at Internal Dielectric Interfaces in High-k Gate Stacks with Transition Metal and Rare Earth Atom Oxide Dielectrics. In: Fanciulli, M., Scarel, G. (eds) Rare Earth Oxide Thin Films. Topics in Applied Physics, vol 106. Springer, Berlin, Heidelberg . https://doi.org/10.1007/11499893_12

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  • DOI: https://doi.org/10.1007/11499893_12

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  • Print ISBN: 978-3-540-35796-4

  • Online ISBN: 978-3-540-35797-1

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