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Strain-Relief at Internal Dielectric Interfaces in High-k Gate Stacks with Transition Metal and Rare Earth Atom Oxide Dielectrics

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Part of the Topics in Applied Physics book series (TAP, volume 106)

Abstract

This Chapter addresses the effects of bonding discontinuities at the internal dielectric interfaces in gate stacks that include transition metal and rare earth atom elemental and complex oxides, as well as transition metal silicate alloys. The focus is on the strain-induced defects, and the reduction of defect densities through strain-driven self-organizations that take place during high-temperature post-deposition annealing.

Keywords

71.55.-i; 72.80.Sk; 73.20.At; 75.47.Lx; 77.55.+f 

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Authors and Affiliations

  1. 1.Department of PhysicsNorth Carolina State UniversityNorth CarolinaUSA
  2. 2.Department of PhysicsRutgers UniversityNew JerseyUSA

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