Strain-Relief at Internal Dielectric Interfaces in High-k Gate Stacks with Transition Metal and Rare Earth Atom Oxide Dielectrics

Part of the Topics in Applied Physics book series (TAP, volume 106)


This Chapter addresses the effects of bonding discontinuities at the internal dielectric interfaces in gate stacks that include transition metal and rare earth atom elemental and complex oxides, as well as transition metal silicate alloys. The focus is on the strain-induced defects, and the reduction of defect densities through strain-driven self-organizations that take place during high-temperature post-deposition annealing.


71.55.-i; 72.80.Sk; 73.20.At; 75.47.Lx; 77.55.+f 


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  1. International Technology Roadmap for Semiconductors (2003 ed.) Google Scholar
  2. G. Wilk, R. W. Wallace, J. M. Anthony: High-κ gate dielectrics: Current status and materials properties considerations, J. Appl. Phys. 89, 5243 (2001) and references therein CrossRefGoogle Scholar
  3. L. C. Feldman, L. Stensgard, P. J. Silverman, T. E. Jackman: in S. T. Pantelides (Ed.): Proceedings of the International Conference on the Physics of SiO 2 and its interfaces (Pergamon, New York 1978) p. 344 Google Scholar
  4. D. E. Aspnes, J. B. Theeten: Optical properties of the interface between Siand its thermally grown oxide, Phys. Rev. Lett. 43, 1046 (1979) CrossRefGoogle Scholar
  5. F. T. Himpsel, F. R. McFeely, J. A. Yarmoff, G. Hollinger: Microscopic structure of the SiO2/Si interface, Phys. Rev. B 38, 6084 (1988) CrossRefGoogle Scholar
  6. T. Yasuda, Y. Ma, S. Habermehl, G. Lucovsky: Low-temperature preparation SiO2/Si(100) interface using a two-step remote plasma-assisted oxidation-deposition process, Appl. Phys. Lett. 60, 434 (1992) CrossRefGoogle Scholar
  7. G. Lucovsky, J. C. Phillips: Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. I. Strain relief at the Si–SiO2 interface, J. Vac. Sci. Technol. B 22, 2087 (2004) CrossRefGoogle Scholar
  8. Y. Tu, J. Tersoff: Structure and energetics of the Si-SiO2 interface, Phys. Rev. Lett. 84, 2449 (2000) CrossRefGoogle Scholar
  9. A. Bongiorno, A. Pasquarello: Atomistic structure of the Si(100)–SiO2 interface: A synthesis of experimental data, Appl. Phys. Lett. 83, 1417 (2003) CrossRefGoogle Scholar
  10. D. A. Muller, T. Sorsch, S. Moccio, F. H. Baumann, K. Evans-Lutterodt, G. Timp: The electronic structure at the atomic scale of ultrathin gate oxides, Nature 399, 758 (1999) CrossRefGoogle Scholar
  11. J. W. Keister, J. E. Rowe, J. J. Kolodziej, H. Niimi, H. S. Tao, T. E. Madey, G. Lucovsky: Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy, J. Vac. Sci. Technol. A 17, 1250 (1999) CrossRefGoogle Scholar
  12. J. T. Fitch, C. H. Bjorkman, G. Lucovsky, F. H. Pollak, X. Yim: J. Vac. Sci. Technol. B 7, 775 (1988) CrossRefGoogle Scholar
  13. E. H. Poindexter, P. Caplan, B. Deal, R. Razouk: Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers, J. Appl. Phys. 52, 879 (1981) CrossRefGoogle Scholar
  14. E. H. Poindexter: MOS interface states: Overview and physicochemical perspective, Semicond. Sci. Technol. 4, 961 (1989) CrossRefGoogle Scholar
  15. J. C. Phillips: Topology of covalent non-crystalline solids. I. Short-range order in chalcogenide alloys, J. Non-Cryst. Solids 34, 153 (1979) CrossRefGoogle Scholar
  16. J. C. Phillips: Topology of covalent non-crystalline solids. II. Medium-range order in chalcogenide alloys and A-Si(Ge), J. Non-Cryst. Solids 43, 37 (1981) CrossRefGoogle Scholar
  17. G. Lucovsky, H. Yang, H. Niimi, J. W. Keister, J. E. Rowe, M. F. Thorpe, J. C. Phillips: Intrinsic limitation on device performance and reliability from bond-constraint induced transition region at interfaces of stacked dielectrics, J. Vac. Sci. Technol. B 18, 1742 (2000) CrossRefGoogle Scholar
  18. G. Lucovsky, Y. Wu, H. Niimi, V. Misra, J. C. Phillips: Bonding constraints and defect formation at interfaces between crystalline silicon and adanced single layer and composite gate dielectrics, Appl. Phys. Lett. 74, 2005 (1999) CrossRefGoogle Scholar
  19. C. H. Bjorkman, T. Yasuda, C. E. Shearon, Jr., U. Emmerichs, C. Meyer, K. Leo, H. Kurz: Influence of surface roughness on the electrical properties of Si–SiO2 interfaces and on second-harmonic generation at these interfaces, Vac. Sci. Technol. B 11, 1521 (1993) CrossRefGoogle Scholar
  20. G. Luepke: Surf. Sci. Rep. 35, 75 (1999) CrossRefGoogle Scholar
  21. C. H. Bjorkman, C. E. Shearon, Jr., Y. Ma, T. Yasuda, G. Lucovsky, U. Emmerichs, C. Meyer, K. Leo, H. Kurz: Second-harmonic generation in Si–SiO2 heterostructure formed by chemical, thermal, and plasma-assisted oxidation and deposition processes, J. Vac. Sci. Technol. A 11, 964 (1993) CrossRefGoogle Scholar
  22. U. Emmerichs, C. Meyer, H. J. Bakker, F. Wolter, H. Kurz, G. Lucovsky, C. H. Bjorkman, T. Yasuda, Y. Ma, Z. Jing, J. L. Whitten: Optical second harmomic generation: A probe of atomic structure and bonding at Si–SiO2 interfaces, and other chemically modified Si surfaces, J. Vac. Sci. Technol. B 12, 2484 (1994) CrossRefGoogle Scholar
  23. J. Schafer, A. P. Young, L. J. Brillson, H. Niimi, G. Lucovsky: Depth-dependent spectroscopy defect characterization of the interface between plasma-deposited SiO2 and silicon, Appl. Phys. Lett. 73, 791 (1998) CrossRefGoogle Scholar
  24. J.-F. T. Wang, G. D. Powell, R. S. Johnson, G. Lucovsky, D. E. Aspnes: J. simplified bond-hyperpolarizability model of second harmonic generation: Application to Si-dielectric interfaces, Vac. Sci. Technol. B 20, 1699 (2002) CrossRefGoogle Scholar
  25. H. Yang, H. Niimi, J. W. Keister, G. Lucovsky: IEEE Electron. Dev. Lett. 21, 76 (2000) CrossRefGoogle Scholar
  26. R. Carius, R. Fischer, F. Holzenkampfer, J. Stuke: Photoluminescence in the amorphous SiOx, J. Appl. Phys. 52, 4241 (1981) CrossRefGoogle Scholar
  27. B. J. Hinds, F. Wang, D. M. Wolfe, C. L. Hinkle, G. Lucovsky: Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition, J. Vac. Sci. Technol. B 16, 2171 (1998) CrossRefGoogle Scholar
  28. J. Neuefeind, K. D. Liss: Bond angle distribution in amorphous germania and silica, Ber. Bunsen Phys. Chem. 100, 1341 (1996) Google Scholar
  29. J. L. Whitten, Y. Zhang, M. Menon, G. Lucovsky: Electronic structure of SiO2: Charge redistribution contribution to the dynamic dipoles/effective charges of the infrared active normal modes, J. Vac. Sci. Techol. B 20, 1710 (2002) CrossRefGoogle Scholar
  30. J. R. Hauser: Extraction of experimental mobility data for MOS devices, IEEE Trans. Electron. Dev. 43, 1981 (1996) CrossRefGoogle Scholar
  31. P. Boolchand: in P. Boolchand (Ed.): Insulating and Semiconducting Glasses (World Scientific, Singapore 2000) p. 191 Google Scholar
  32. P. Boolchand, D. G. Georgiev, M. Micoulaut: J. Optoelectron. and Adv. Mater. 4, 823 (2002) Google Scholar
  33. G. Lucovsky, J. C. Phillips: Microscopic bonding and macroscopy strain relaxations at Si–SiO2 interfaces, Appl. Phys. A 78, 453 (2004) CrossRefGoogle Scholar
  34. R. S. Johnson, G. Lucovsky, I. Baumvol: Physical and electrical properties of noncrystalline Al2O3 prepared by remove plasma enhanced chemical vapor deposition, J. Vac. Sci. Technol. A 19, 1353 (2001) CrossRefGoogle Scholar
  35. G. Lucovsky: Electronic structure of trnsition metal/rare earth althernative high-k gate dielectrics: Interfacial band alignments and intrinsic defects, Microeletron. Reliab. 43, 1417 (2003) CrossRefGoogle Scholar
  36. J. G. Hong: Ph.D. thesis, North Carolina State University, Raleigh, USA (2003) Google Scholar
  37. J. J. Chambers, G. N. Parsons: Physical and electrical characterization of ultrathin yttrium silicate insulators on silicon, J. Appl. Phys. 90, 918 (2001) CrossRefGoogle Scholar
  38. R. Chau, S. Datta, M. Doczy, J. Kavalieros, M. Metz: Gate dielectric scaling for high-performance CMOS: From SiO2 to high-k, in International workshop on gate insulator(s) (Tokyo, Japan 2003) Google Scholar
  39. C. C. Fulton, G. Lucovsky, R. J. Nemanich: Process-depended band structure changes of transition-metal (Ti, Zr, Hf) oxides on Si, (100), Appl. Phys. Lett. 84, 580 (2004) CrossRefGoogle Scholar
  40. W. A. Harrison, E. A. Kraut, J. R. Walthrop, R. W. Grant: Polar heterojunction interfaces, Phys. Rev. B 18, 4402 (1978) CrossRefGoogle Scholar
  41. H. J. Richter, M. Herrmann, W. Hermel: Calculation of heterogenous phase equilibrial in the system Si–Mg–N–O, J. Eur. Ceram. Soc. 7, 3 (1991) CrossRefGoogle Scholar
  42. J. P. Maria, D. Wichakana, J. Parrete, A. I. Kingon: Crystallization in SiO2-metal oxides alloys, J. Mater. Res. 17, 1571 (2002) Google Scholar
  43. G. B. Rayner, D. Kang, G. Lucovsky: Spectroscopy study of chemical phase separation in zirconium silicate alloys, J. Vac. Sci. Technol. B 21, 1783 (2003) CrossRefGoogle Scholar
  44. C. L. Hinkle, G. Lucovsky: Remote plasma-assisted nitridation (RPN): Applications to Zr and Hf silicate alloys and Al2O3, Appl. Surf. Sci. 216, 124 (2003) CrossRefGoogle Scholar
  45. G. J. Ball, M. A. Mignanelli, J. I. Barry, J. A. Gisby: The calculation of phase equilibria of oxide core-concrete systems, J. Nucl. Mater. 20, 238 (1993) CrossRefGoogle Scholar
  46. G. Cevales: Ber. Deutsch. Keram. Ges. 45, 216 (1968) Google Scholar
  47. V. A. Lysenko: Neorg. Mater. 30, 930 (1994) Google Scholar
  48. R. S. Johnson, J. G. Hong, C. L. Hinkle, G. Lucovsky: Electron trapping in noncrystalline remote plasma deposited Hf-aluminate alloys for gate dielectric applications, J. Vac. Sci. Technol. B 20, 1126 (2002) CrossRefGoogle Scholar
  49. D. Arnold, E. Cartier, D. J. Maria: Theory of high-field electron transport and impact ioninization in silicon dioxide, Phys. Rev. B 49, 10278 (1994) CrossRefGoogle Scholar
  50. S. Lombardo, J. H. Stathis, B. P. Linder: Breakdown transients in ultrathin gate oxides: Transition in the degradation rate, Phys. Rev. Lett. 90, 167601 (2003) CrossRefGoogle Scholar
  51. G. Lucovsky, J. G. Hong, C. C. Fulton, Y. Zou, R. J. Nemanich, H. Ade: X-ray absorption spectra for transition metal high-kappa dielectrics: Final state differences for intra- and inter-atomic transitions, J. Vac. Sci. Technol. 22, 2132 (2004) CrossRefGoogle Scholar
  52. G. Lucovsky, et al.: Radiation Physics and Chemistry (2005) in press Google Scholar

Authors and Affiliations

  1. 1.Department of PhysicsNorth Carolina State UniversityNorth CarolinaUSA
  2. 2.Department of PhysicsRutgers UniversityNew JerseyUSA

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