Local Atomic Environment of High-κ Oxides on Silicon Probed by X-Ray Absorption Spectroscopy

Part of the Topics in Applied Physics book series (TAP, volume 106)


We describe the use of X-ray absorption spectroscopy (XAS) with synchrotron radiation to study the local atomic structure of high-κ oxide thin and ultra-thin films deposited on silicon. A brief description of the advantages of XAS to probe local atomic arrangements in this context is given. We then describe two case studies: Y2O3/Si(001) and Lu2O3/Si(001).


71.55.-i; 72.80.Sk; 73.20.At; 75.47.Lx; 77.55.+f 


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Authors and Affiliations

  1. 1.Department of Physics and CNR-INFMUniversity of BolognaBolognaItaly

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