Precessional Switching of Thin Nanomagnets with Uniaxial Anisotropy

Abstract

This review describes the evolution of the magnetization of uniaxial thin magnets when subjected to fast-rising magnetic-field pulses. We report detailed “all-electrical” experimental investigations of precessional switching on soft uniaxial micrometer-sized thin magnets, and we discuss them using a comprehensive, mostly analytical framework. General criteria are derived for the analytical assessment of the switching ability of any arbitrary set of experimental parameters. For this, we start from the Landau–Lifshitz equation and first consider the precessional switching in a much idealized macrospin, easy-plane loss-free system. We then test the main outputs of this model with time-resolved experiments on advanced Magnetic Random Access Memories (MRAM) cells. Using applied fields above the anisotropy field H _k , we prove the quasiperiodic nature of the magnetization trajectory and we demonstrate experimental conditions ensuring a sub-200 ps ballistic magnetization reversal. We then upgrade our model accuracy by taking into account the uniaxial anisotropy and the behavior in hard-axis fields of the order of H _k . We derive a simple though reliable estimate of the switching speed; its limiting factors highlight the experimental poor switching reproducibility when close to the minimal hard-axis reversal field H _k /2. The latter field does not correspond to the minimal energy cost of the reversal, whose prospective evolution in the future generations of MRAM is predicted. Small departures from the macrospin state are discussed. The effect of damping is modeled using perturbation theory. Finite damping alters the precessional motion periodicity and puts some constraints on the field rise time. A special focus is dedicated to the relaxation-dominated precessional switching: the minimal hard-axis field triggering the switching is shown to be above H _k /2 by an extra field cost linked to the damping constant times the square root of M _S H _k . Finally, the selective addressing and the direct-write of a magnetic cell with combined easy-axis and hard-axis fields are studied. We introduce the concept of bounce and revisit the dynamical astroid to derive the related characteristic reversal durations and their margins. We propose a field timing that is immune to the delay jitter between the combined addressing fields. We finish by investigating briefly the challenges and the promises of the “precessional” strategy for future MRAM generations.