Abstract
Conventionally, the final polishing of single-crystal silicon carbide has been performed by loose abrasive grain polishing. However, its removal rate was low and it required a very long time. In this study, an advanced-type Loosely Held Abrasive (LHA) pad for polishing was examined; this pad comprised abrasive grains, and water or a polishing lubricant containing an additive agent was supplied in order to improve the polishing process. Consequently, it was clarified that by adjusting the amount of supply of water or the polishing lubricant containing the additive agent, a high removal rate could be attained during free abrasive grain polishing.
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© 2007 Springer-Verlag London Limited
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Sato, M., Okuda, K. (2007). Polishing of Single Crystal SiC with the LHA Pad. In: Towards Synthesis of Micro-/Nano-systems. Springer, London . https://doi.org/10.1007/1-84628-559-3_46
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DOI: https://doi.org/10.1007/1-84628-559-3_46
Publisher Name: Springer, London
Print ISBN: 978-1-84628-558-5
Online ISBN: 978-1-84628-559-2
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