Novel Abrasive-free Planarization of Si and SiC using Catalyst
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We propose a new chemical planarization method using a catalyst as a polishing plate. A sample is placed on the polishing plate in a solution that is a source of reactive species. Since the catalyst generates reactive species that activate only next to the catalyst surface, this method can efficiently planarize. This processed surface is not damaged by chemical removal. We named this method CAtalyst-Referred Etching (CARE). CARE was applied to SiC planarization. The processed surfaces were observed by atomic force microscopy and optical interferometry. These observations presented a marked reduction in surface roughness.
KeywordsSilicon Carbide Polishing Etching Catalyst Hydrofluoric Acid and Platinum
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