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Novel Abrasive-free Planarization of Si and SiC using Catalyst

  • Hideyuki Hara
  • Yasuhisa Sano
  • Hidekazu Mimura
  • Kenta Arima
  • Akihisa Kubota
  • Keita Yagi
  • Junji Murata
  • Kazuto Yamauchi
Conference paper

Abstract

We propose a new chemical planarization method using a catalyst as a polishing plate. A sample is placed on the polishing plate in a solution that is a source of reactive species. Since the catalyst generates reactive species that activate only next to the catalyst surface, this method can efficiently planarize. This processed surface is not damaged by chemical removal. We named this method CAtalyst-Referred Etching (CARE). CARE was applied to SiC planarization. The processed surfaces were observed by atomic force microscopy and optical interferometry. These observations presented a marked reduction in surface roughness.

Keywords

Silicon Carbide Polishing Etching Catalyst Hydrofluoric Acid and Platinum 

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References

  1. [1]
    W. Qian, M. Skowronski, G. Augustine, R. C. Glass, H. McD. Hobgood, and R. H. Hopkins, (1995) Characterization of polishing-related surface damage in (0001) silicon carbide substrates. Journal of the Electrochemical Society 142:4290–4294.CrossRefGoogle Scholar
  2. [2]
    J. A. Powell and D. J. Larkin, (1997) Process-induced morphological defects in epitaxial CVD silicon carbide. Physica Status Solidi B-basic Reserch 202:529–548.CrossRefGoogle Scholar
  3. [3]
    L. Zhou, V. Audurier, P. Pirouz, and J. A. Powell, (1997) Chemomechanical Polishing of Silicon Carbide. Journal of the Electrochemical Society 144:L161–L163.CrossRefGoogle Scholar
  4. [4]
    M. Kikuchi, Y. Takahashi, T. Suga, S. Suzuki, and Y. Bando, (1992) Mechanochemical Polishing of Silicon-Carbide Single-crystal with chromium(III) Oxide Abrasive. Journal of American Ceramic Society 75:189–194.CrossRefGoogle Scholar
  5. [5]
    C. Li, I. B. Bhat, R. Wang, and J. Seiler, (2004) Electro-chemical mechanical polishing of silicon carbide. Journal of Electronic Materials 33:481–486.Google Scholar
  6. [6]
    F. Owman, C. Hallin, P. Martensson, and E. Janzen, (1996) Removal of polishing-induced damage from 6H-SiC(0001) substrates by hydrogen etching. Journal of Crystal Growth 167:391–395.CrossRefGoogle Scholar
  7. [7]
    C. Hallen, F. Owman, P. Martensson, A. Ellison, A. Konstantinov, O. Kordina, and E. Janzen, (1997) In situ substrate preparation for high-quality SiC chemical vapour deposition. Journal of Crystal Growth 181:241–253.CrossRefGoogle Scholar
  8. [8]
    H. Hara, Y. Sano, H. Mimura, K. Arima, A. Kubota, K. Yagi, J. Murata and K. Yamauchi, (2006) Novel abrasive-free planarization of 4H-SiC(0001) using catalyst. Journal of Electronic Materials accepted.Google Scholar
  9. [9]
    A. Kubota, H. Mimura, K. Inagaki, K. Arima, Y. Mori, and K. Yamauchi, (2005) Preparation of Ultrasmooth and Defect-Free 4H-SiC(0001) Surfaces by Elastic Emission Machining. Journal of Electronic Materials 34:439–443.Google Scholar
  10. [10]
    Y. Ichii, Y. Mori, K. Hirose, K. Endo, K. Yamauchi and H. Goto, (2005) Electrochemical etching using surface carboxylated graphite electrodes in ultrapure water. Electrochemica Acta, 50:5379–5383.CrossRefGoogle Scholar
  11. [11]
    Y. Mori, K. Yamauchi, K. Yamamura, and Y. Sano, (2000) Development of plasma chemical vaporization machining. Review of Scientific Instruments, 71:4627–4632.CrossRefGoogle Scholar
  12. [12]
    F.T. Wagner and P.N. Ross, Jr. (1988) Long-range structural effects in the anomalous voltammetry on ultra-high vacuum prepared Pt (111). Journal of Electroanalytical Chemistry 250:301–320.CrossRefGoogle Scholar

Copyright information

© Springer-Verlag London Limited 2007

Authors and Affiliations

  • Hideyuki Hara
    • 1
  • Yasuhisa Sano
    • 1
  • Hidekazu Mimura
    • 1
  • Kenta Arima
    • 1
  • Akihisa Kubota
    • 2
  • Keita Yagi
    • 1
  • Junji Murata
    • 1
  • Kazuto Yamauchi
    • 1
  1. 1.Osaka UniversityOsaka
  2. 2.Kumamoto UniversityKumamoto

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