Conclusions
EBSD has been applied to study the microstructure of copper interconnects in detail. Both, top-view and cross-section investigations were performed. FIB polishing was successfully applied to obtain cross-sections of specific structures like vias. Moreover, it has been shown that passivated test structures can be investigated. With the high spatial resolution of EBSD it also becomes possible to study nanointerconnects with critical dimension of 60 nm and below. Complex experiments can be conducted, which will improve the understanding of the microstructure evolution and the impact on performance and reliability of advanced integrated circuits.
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Meyer, M.A., Zienert, I., Zschech, E. (2005). Electron Backscatter Diffraction: Application to Cu Interconnects in Top-View and Cross Section. In: Zschech, E., Whelan, C., Mikolajick, T. (eds) Materials for Information Technology. Engineering Materials and Processes. Springer, London. https://doi.org/10.1007/1-84628-235-7_39
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DOI: https://doi.org/10.1007/1-84628-235-7_39
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