Skip to main content
SpringerLink
Log in
SpringerLink
Log in

Advanced Material Characterization by TOFSIMS in Microelectronic

  • Chapter
Materials for Information Technology

Part of the book series: Engineering Materials and Processes ((EMP))

  • 1546 Accesses

Conclusion

This short review of the application of TOFSIMS in the field of materials characterisation in microelectronics has shown the versatility of this technique both in terms of the material that can be studied (organic/inorganic, conducting/insulating, etc.) or in term of the experimental conditions that can be used (ion types, static vs. dynamic mode, imaging, etc.). In some areas not covered here, it is also possible to

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 169.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 219.00
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 219.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. International Technology Roadmap for Semiconductors (ITRS), Semiconductor International Association (2003), http://public.itrs.net/

    Google Scholar 

  2. H De Witte., S Degendt., M Douglas., K Kenis., P.W Mertens., W Vandervorst. et al., J. Electrochem. Soc., 147, pp 1915–19, (2000)

    Article  Google Scholar 

  3. I. Mowat, P. Lindley, L. McCaig, Appl. Surf. Sci., 203/204, 495–499 (2003)

    Article  Google Scholar 

  4. P. Lazzeri, A. Lui, L. Moro, L. Vanzetti, Surf. Interface Anal., 29, 793–803 (2000)

    Article  Google Scholar 

  5. F. Zanderico, S. Ferrari, G. Queirolo, C. Pello, M. Borgini, Mater. Sci. Eng. B, 73, 173–177 (2000)

    Article  Google Scholar 

  6. M.A. Douglas and P. J. Chen, Surf. Interface Anal. 26, 984–994 (1998)

    Article  Google Scholar 

  7. H. Li, D.J. Hymes, J. De Larios, I.A. Mowat, P.M. Lindley. Micro 17, 35–54 (1999)

    Google Scholar 

  8. S. Jeon, C. Wong, S. Ohsiek, H.S. Kim, B. Ogle, Diffusion and defect data, part B (Solid State Phenomena) 92, 125–128 (2003)

    Google Scholar 

  9. A. Karen, N. Man, T. Shibamori, K. Takahashi, Appl. Surf. Sci. 203–204, 541–546, (2003)

    Article  Google Scholar 

  10. A. Roche, C. Wyon, S. Marthon, J.F. Ple, M. Olivier, N. Rochat et al., AIP Conference Proceedings 550, 297–301, 2001

    Article  Google Scholar 

  11. T. Conard, W. Vandervorst, J. Petry, C. Zhao, W. Besling, H. Nohira, et al., Appl. Surf. Sci. 203–204, pp400–403 (2003)

    Article  Google Scholar 

  12. H. De Witte, T. Conard, W. Vandervorst, R. Gijbels, Appl. Surf. Sci. 203–204, pp523–526 (2003)

    Article  Google Scholar 

  13. B. Crivelli, M. Alessandri, S. Alberici, D. Brazzelli, A.C. Elbaz, S. Frabboni et al., CMOS Front End Materials and Process Technology Symposium, Mater. Res. Soc. Symposium processing vol 765, pp65–70, (2003)

    Google Scholar 

  14. G. Scarel, S. Ferrari, S. Spiga, C. Wiemer, G. Tallarida, M. Franciulli, J. Vac. Sci. Technol. A, 21, 1359–1365 (2003)

    Article  Google Scholar 

  15. S. Balakumar, Chi Fo Tsang, N., Matsuki, Advanced Metallization Conference 2003, 613–620 (2004)

    Google Scholar 

  16. Y.Q. Zhu, E.T. Kang, K.G. Neoh, L. Chan, D.M.Y. Lai, A.C.H. Huan, Appl. Surf. Sci, 225, 144–155 (2004)

    Article  Google Scholar 

  17. E.T. Ryan, M. Freeman, L. Svedberg, J.J. Lee, T. Guenther, J. Connor et al., Mater Res. Soc. 766, 89–94 (2003)

    Google Scholar 

  18. I. Shahvandi, B. Brennan, C. Prindle, D. Denning, T. Lii, J. Iacoponi, Advanced Metallization Conference 2001, 559–566 (2001)

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Material and Component Analysis Department, IMEC, Leuven, Belgium

    T. Conard & W. Vandervorst

Authors
  1. T. Conard
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. W. Vandervorst
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. Materials Analysis Department, AMD Saxony Limited Liability Company & Co. KG, Wilschdorfer Landstraße 101, D-01109, Dresden, Germany

    Ehrenfried Zschech (Dr. rer. nat.) (Dr. rer. nat.)

  2. IMEC, Kapeldreef 75, B-3001, Leuven, Belgium

    Caroline Whelan Ph.D.

  3. Flash Technology Predevelopment, Infineon Technologies SC300, Königsbrücker Straße 180, D-01099, Dresden, Germany

    Thomas Mikolajick (Dr.-Ing.) (Dr.-Ing.)

Rights and permissions

Reprints and permissions

Copyright information

© 2005 Springer-Verlag London Limited

About this chapter

Cite this chapter

Conard, T., Vandervorst, W. (2005). Advanced Material Characterization by TOFSIMS in Microelectronic. In: Zschech, E., Whelan, C., Mikolajick, T. (eds) Materials for Information Technology. Engineering Materials and Processes. Springer, London. https://doi.org/10.1007/1-84628-235-7_35

Download citation

  • DOI: https://doi.org/10.1007/1-84628-235-7_35

  • Publisher Name: Springer, London

  • Print ISBN: 978-1-85233-941-8

  • Online ISBN: 978-1-84628-235-5

  • eBook Packages: EngineeringEngineering (R0)

Publish with us

Policies and ethics

Search

Navigation