Conclusion
The semiconductor industry has already entered the world of nanotechnology. The impact of nanodimensions on materials and device properties has driven the introduction of new materials such as low-k inter-level dielectrics. This change in dimension and properties has also resulted in the need to develop new materials characterization capabilities. In addition, it is important to note that materials characterization will continue to play a critical role in the development of new nanoelectronic technology and in manufacturing process control.
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References
G.D. Hutchinson, The First Nanochips, Scientific American, April, 2004, p 48–55.
Semiconductor Industry Association (SIA), International Roadmap for Semiconductors 2003 and subsequent editions, Austin, TX: International SEMATECH, 2003. (This is available for printing and viewing from the Internet, with the following URL: http://public.itrs.net.)
P.E. Batson, N. Dellby and O.L. Krivanek, Sub-ångstrom resolution using aberration corrected electron optics, Nature 418, 617 (2002).
P. Seidel, EUV Mask Blank Fabrication and Metrology, In: Characterization and Metrology for ULSI Technology 2003, edited by D.G. Seiler, A.C. Diebold, T.J. Shaffner, R. Mcdonald, S. Zollner, R.P. Khosla et al., AIP conference Proceedings 683, (AIP, New York, 2003), p 371–380.
H.G. Tompkins and W.A. McGahan, Thin Metal Films In: Spectroscopic Ellipsometry and Reflectometry, Wiley, New York, (1999), pp 181–187.
A.C. Diebold, P.Y. Hung, J. Price, B. Foran, H. Celio, and T. Kelly, Interface Characterization in the Semiconductor Industry, The 204th Electrochemical Society’s International Symposium on Interfaces in electronic materials (H1), 2003.
M. Kiene, M. Morgan, J-H Zhao, C. Hu, T. Cho, and P.S. Ho, Characterization of Low-Dielectric Constant Materials, In: Handbook of Silicon Semiconductor Metrology, edited by A.C. Diebold, Dekker, New York, (2001), pp 245–278.
B.G. Streetman and S. Banerjee, Solid State Electronic Devices, 5th edn, Prentice Hall, Upper Saddle River, (2000), pp 452–461.
T. Ghani, M. Armstrong, C. Auth, M. Bost, P. Charvat, G. Glass et al., A 90-nm High Volume Manufacturing Logic Technology Featuring Novel 45-nm Gate Length Strained Silicon CMOS Transistors, IEDM Tech. Digest 2003, pp 978–980.
V. Chan, R. Rengarajan, N. Rovedo, W. Jin, T. Hook, P. Nguyen et al., High Speed 45 nm Gate Length CMOSFETs incorporated into a 90 nm Bulk Technology Using Strain Engineering, IEDM Tech. Digest (2003), pp 77–80.
M.D. Giles, M. Armstrong, C. Auth, S.M. Cea, T. Ghani, T. Hoffmann et al., Understanding Stress Enhanced Performance in Intel 90nm CMOS Technology, 2004 Symposium on VLSI Technology Technical Digest of Papers, pp 118–119.
R.A. Bianchi, G. Bouche, and O. Roux-dit-Buisson, Accurate Modeling of Trench Isolation Induced Mechanical Stress Effects on MOSFET Electrical Performance, IEDM 2002 Tech. Digest, pp 117–120.
R. Khamankar, H. Bu, C. Bowen, S. Chakravarthi, P. R. Chidambaram, M. Bevan et al., An Enhanced 90nm High Performance Technology with Strong Performance Improvements from Stress and Mobility Increase through Simple Process Changes, pp 162–163.
Q. Xiang, J-S Goo, J. Pan, B. Yu, S. Ahmed, J. Zhang, and M.-R Lin, Strained Silicon NMOS with Nickel-Silicide Metal Gate, 2003 Symposium on VLSI Technology Digest of Technical Papers, pp 101–102.
M.V. Fischetti, F. Gamiz, and W. Hansch, On the Enhanced Electron Mobility in Strained-Silicon Inversion Layers, J. Appl. Phys. 92, 7320 (2002).
M. Lundstrom and Z. Ren, Essential Physics of Carrier Transport in Nanoscale MOSFETs, IEEE Trans. on Electron. Devices 49, (2002), pp 133–141.
P.M. Zeitzoff, J.A. Hutchby and H.R. Huff, MOSFET and Front-End Process Integration: Scaling Trends, Challenges, and Potential Solutions Through The End of The Roadmap, Int. J. High-Speed Electron. Syst., 12, 267–293 (2002).
B. Doris, M. Ieong, T. Kanarsky, Y. Zhang, R.A. Roy, O. Dokumaci et al., Extreme Scaling with Ultra-Thin Si Channel MOSFETs, IEDM Techn. Digest 2002, pp 267–270.
B. Doris, M. Ieong, H. Zhu, Y. Zhang, M. Steen, W. Natzle et al., Device Design Considerations for Ultra-Thin SOI MOSFETs, IEDM Techn. Digest 2003, pp 631–634.
L.J. Allen, S.D. Findlay, A.R. Lupini, M.P. Oxley, and S.J. Pennycook, Atomic-Resolution Electron Energy Loss Spectroscopy Imaging in Aberration Corrected Scanning Transmission Electron Microscopy, Phys. Rev. Lett. 91, (2003), 105503 1–4.
M. Varela, S.D. Findlay, A.R. Lupini, H.M. Christen, A.Y. Borisevich, N. Dellby et al., Spectroscopic Imaging of Single AtomsWithin a Bulk Solid, Phys. Rev. Letters 92, (2004) 95502 1–4.
S. Wang, A.Y. Borisevich, S.N. Rashkeev, M.V. Glazoff, K. Sohlberg, S.J. Pennycook et al., Dopants adsorbed as single atoms prevent degradation of catalysts, Nature Mat. 3, (2004), p 143–146.
S.J. Pennycook, A.R. Lupini, A. Borisevich, Y. Peng and N. Shibata, 3D Atomic Resolution Imaging through Aberration-Corrected STEM, Microsc. and Microanal. (2004), p 1172 CD.
C.-L. Jia, M. Lentzen, and K. Urban, High-Resolution Transmission Electron Microscopy Using Negative Spherical Aberration, Microsc. Microanal. 10, 174–184, (2004).
M. Mukai, T. Kaneyama, T. Tomita, K. Tsuno, M. Terauchi, K. Tsuda et al., Performance of the MIRAI-21 Analytical Electron Microscope, Microsc. Microanal. 10, CD858–859, 2004.
L.F. Allard, D.A. Blom, M.A. O’Keefe, C. Kiely, D. Ackland, M. Wantanabe et al., First Results from the Aberration-Corrected JEOL 220FS-AC STEM/TEM, Microsc. and Microanal. 10, (2004), pp 110–111.
Earl J. Kirkland, R.F. Loane and John Silcox, Simulation of Annular Dark Field STEM Images using a Modified Multisclice Method, Ultramicroscopy 23 (1987) 77–96.
P.M. Voyles, D.A. Muller, and E.J. Kirkland, Depth-Dependent Imaging of Individual Dopant Atoms in Silicon, Microsc. Microanal. 10, 291–300 (2004).
C. Dwyer and J. Etheridge, Scattering of Atomic Scale Electron Probes in Silicon, Ultramicroscopy 96, (2003), p 343–360.
T. Plamann and M.J. Hytch, Tests on the Validity of the atomic column approximation for STEM Probe Propagation, Ultramicroscopy 78, (1999), p 153–161.
K. van Benthem, M. Kim, S.J. Do, J.T. Luck, A.R. Lupini, and S.J. Pennycook, Three Dimensional Imaging of Individual Hafnium Atoms at a Si/SiO2/HfO2 Dielectric Interface, submitted for publication.
Z. Yu, D.A. Muller, and J. Silcox, Study of Strain Fields at a-Si’ c-Si Interface, J. Appl. Phys. 95, (2004), pp 3362–3371.
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Diebold, A.C. (2005). Challenges to Advanced Materials Characterization for ULSI Applications. In: Zschech, E., Whelan, C., Mikolajick, T. (eds) Materials for Information Technology. Engineering Materials and Processes. Springer, London. https://doi.org/10.1007/1-84628-235-7_34
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DOI: https://doi.org/10.1007/1-84628-235-7_34
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