Skip to main content
SpringerLink
Log in
Book cover

Materials for Information Technology pp 111–125Cite as

An Introduction to Nonvolatile Memory Technology

  • Chapter

Part of the book series: Engineering Materials and Processes ((EMP))

This is a preview of subscription content, log in via an institution.

Chapter
USD   29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD   169.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD   219.00
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD   219.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Learn about institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. A. Niebel, Proceedings of the Non-Volatile Semiconductor Memory Workshop, p. 9–13 (2000)

    Google Scholar 

  2. A. Niebel, Proceedings of the Non-Volatile Semiconductor Memory Workshop, p. 14–19 (2004)

    Google Scholar 

  3. W.D. Brown and J.E. Brewer (Ed.), Nonvolatile Semiconductor Memory Technology, IEEE Press, New York, (1998)

    Google Scholar 

  4. S. Lai, Proceedings of the Seventh Biennial IEEE International Nonvolatile Memory Technology Conference, p. 6–7 (1998)

    Google Scholar 

  5. S. Mori et. al., IEEE Trans. Electron. Devices 38,2, 386–391 (1991)

    Article  Google Scholar 

  6. P. Pavan et al., Proc. IEEE 85, 1248–1271 (1997)

    Article  Google Scholar 

  7. S. N. Keeney, IEDM digest of technical papers p. 2.5.1–4 (2001)

    Google Scholar 

  8. B. Eitan, G. Crisenza, P. Cappelletti, and A. Modelli, IEDM Digest of technical papers, p.169–172 (1996)

    Google Scholar 

  9. G. Atwood, A. Fazio, D. Mills and B. Reaves, Intel Technol. J. Q4, 1–8 (1997)

    Google Scholar 

  10. A. Modelli, A. Manstretta, and G. Torelli, IEEE Trans. Electron. Devices 48(9), 2032–2042 (2001)

    Article  Google Scholar 

  11. T. Cho et al., ISSCC Digest of Technical papers, 28–29 (2001)

    Google Scholar 

  12. S. Lee, ISSCC Digest of Technical papers, p. 52–53 (2004)

    Google Scholar 

  13. A. Fazio, S. Keeney, S. Lai, Intel Technol. J. 6, No. 2, 23–30 (2002)

    Google Scholar 

  14. H. Pein and J.D. Plummer, IEEE Electron. Device Lett. 14, No. 8, 415–417 (1993)

    Article  Google Scholar 

  15. D.S. Kuo, M. Simpson, L. Tsou and S. Mukherjee, Symposium on VLSI Technology Digest of Technical Papers 51–52 (1994)

    Google Scholar 

  16. C.T. Swift et al., IEDM Digest of technical papers, 927–930 (2002)

    Google Scholar 

  17. M. Sadd, Proceedings of the Non-Volatile Semiconductor Memory Workshop, 75–76 (2004)

    Google Scholar 

  18. H. Bachhofer et al. J. Appl. Phys. 89,5, 2791–2800 (2001)

    Article  Google Scholar 

  19. Y. Shin, Proceedings of the Non-Volatile Semiconductor Memory Workshop, 58–59 (2003)

    Google Scholar 

  20. K. Kim, Proc. 24th International Conference on Microelectronics 1, 377–384 (2004)

    Google Scholar 

  21. B. Eitan et al., IEEE Electron. Device Lett. 21, No. 11 543–545 (2000)

    Article  Google Scholar 

  22. W. J. Tsai et al., IEDM Digest of technical papers, 32.6.1–4 (2001)

    Google Scholar 

  23. Y. Roizin, A. Yankelevich and Y. Netzer, AIP Conference Proceedings, No. 550, 181–185 (2001)

    Article  Google Scholar 

  24. Y.K. Lee et al. Symposium on VLSI Technology Digest of Technical Papers, 208–209 (2002)

    Google Scholar 

  25. E. Maayan et al., ISSCC digest of technical papers, 100–101 (2002)

    Google Scholar 

  26. B. Q. Le at al., IEEE Journal of Solid State Circuits 39, No. 11, 2014–2023 (2004)

    Article  Google Scholar 

  27. S. Tiwari et al., IEDM Digest of technical papers 521–524 (1995)

    Google Scholar 

  28. K. Likharev, Appl. Phys. Lett. 73, No. 15, 2137–2139 (1998)

    Article  Google Scholar 

  29. K. Nakazato et al., ISSCC Digest of Technical Papers, 132–133 (2000)

    Google Scholar 

  30. J. H. Yi et al., IEDM Digest of technical papers, 36.1.1–4 (2001)

    Google Scholar 

  31. T. Mikolajick and C.-U. Pinnow, Proceedings of the Non-Volatile Memory Technology Symposium, 3–12 (2002)

    Google Scholar 

  32. C.-U. Pinnow and T. Mikolajick, Journal of the Electrochemical Society 151, No. 6, K13–K19 (2004)

    Article  Google Scholar 

  33. T. Mikolajick et al., Microelectronics Reliability 41, No.7, 947–950 (2001)

    Article  Google Scholar 

  34. D. Takashima et al., ISSCC Digest of technical papers, 40–41 (2001)

    Google Scholar 

  35. S. Shiratake, IEEE Journal of Solid-State Circuits 38, No. 11, 1911–1919 (2003)

    Article  Google Scholar 

  36. N. Nagel, VLSI Technology Digest of Technical Papers, 167–147 (2004)

    Google Scholar 

  37. D. Boundurant, Ferroelectrics 112, 273–282 (1990)

    Google Scholar 

  38. Y. Watanabe et al., Appl. Phys. Lett. Vol. 78, No. 23, p. 3738–3740 (2000)

    Article  Google Scholar 

  39. S.Q. Liu et al., Appl. Phys. Lett. Vol. 78, No. 19, p. 2749–2751 (2000)

    Article  Google Scholar 

  40. C. Pagagianni et al., Proceedings of the Non-Volatile Memory Technology Symposium, 125–128 (2004)

    Google Scholar 

  41. G.I. Meijer, Proceedings of the Non-Volatile Semiconductor Memory Workshop, 13 (2004)

    Google Scholar 

  42. R.A. Sinclair et al., IEEE International Nonvolatile Memory Technology Conference, 38–42 (1998)

    Google Scholar 

  43. W.J. Gallager et al., J. Appl. Phys. Vol. 81, No. 8, p. 3741–3746 (1997)

    Article  Google Scholar 

  44. S. Tehrani et al., IEEE International Nonvolatile Memory Technology Conference, 43–46 (1998)

    Google Scholar 

  45. S. Parkin, J. Appl. Phys. 85, No. 8, 5828–5833

    Google Scholar 

  46. J. DeBrosse at al., Symposium on VLSI Technology Digest of Technical Papers, 454–457 (2004)

    Google Scholar 

  47. M. Durlam et al., IEEE International Conference on Integrated Circuit Design and Technology, 27–30 (2004)

    Google Scholar 

  48. S. Lai and T. Lowrey, IEDM Digest of technical papers 36.5.1–4 (2001)

    Google Scholar 

  49. S. Ogawa et al., Proc. SPIE Vol. 3401, 272–276 (1998)

    Article  Google Scholar 

  50. S. Lee et al., ISSCC Digest of technical papers, 52–53 (2004)

    Google Scholar 

  51. M. Kozicki et al., Electrochemical Society Proceedings 13, 298–309 (1999)

    Google Scholar 

  52. T. Sakamoto, Appl. Phys. Lett. 82, No. 18, 3032–3034 (2003)

    Article  Google Scholar 

  53. M. Kozicki et al., Proceedings of the Non-Volatile Memory Technology Symposium, 10–17 (2004)

    Google Scholar 

  54. Ju. H. Krieger and S. Spitzer, Proceedings of the Non-Volatile Memory Technology Symposium, 121–124 (2004)

    Google Scholar 

  55. S. Lai, Intel Developer Forum, 21–24 (2002) (http://www.intel.com/research/silicon/ StefanLaiIDF0202.htm)

    Google Scholar 

  56. M. Johnson et al., IEEE J. Solid State Circuits 38, No. 11, 1920–1928 (2003)

    Article  Google Scholar 

  57. T. Wang, J. Herbert, and A. Glass (eds.), The Applications of Ferroelectric Polymers, Blackie&Son, Glasgow and London (1988)

    Google Scholar 

  58. L.-Jie, E. Schreck, and K. Dransfeld, Appl. Phys. A 53, p. 457–461(1991)

    Article  Google Scholar 

  59. Yu. H. Krieger, J. Struct. Chem. 40, No. 4, 594–619 (1999)

    Google Scholar 

  60. Yu. H. Krieger, S.V. Trubin, S.B. Vaschenko, N.F. Yudanov, Synth. Metals 122, 199–202 (2001)

    Article  Google Scholar 

  61. Yu. H. Krieger, N.F. Yudanov, I.K. Igumenov S.B. Vaschenko, J. Struct. Chem. 34, No. 6, 966–970 (1993)

    Article  Google Scholar 

  62. R. S. Potember, T. O. Poehler and D. O. Cowan, Appl. Phys. Lett. 34, 405 (1979)

    Article  Google Scholar 

  63. R. Seczi et al., IEDM Digest of technical papers 10.2.1–10.2.4 (2003)

    Google Scholar 

  64. D. Ma, M. Aguire, J.A Freire, and I.A. Huemmelgen, Adv. Mater. 12, No. 14, 1063–1066 (2000)

    Article  Google Scholar 

  65. K. Sakai et al., Appl. Phys. Lett. 53, No. 14, 1274–1276 (1988)

    Article  Google Scholar 

  66. H.K. Henisch et al., Thin Solid Films 51 265–274 (1978)

    Article  Google Scholar 

  67. L. P. Ma, J. Liu, and Y. Yang, Organic electrical bistable devices and rewritable memory cells, Appl. Phys. Lett. 80, No. 16 (2002) 2997–2999

    Article  Google Scholar 

  68. C.-Y. Liu and A.J. Bard, Acc. Chem. Res. 32, 235–245 (1999)

    Article  Google Scholar 

  69. C.P. Collier et al., Science 285, 391–394 (1999)

    Article  Google Scholar 

  70. C. P. Collier et al., Science 289, 1172–1175 (2000)

    Article  Google Scholar 

  71. Y. Luo et al., Chemphyschem, No.3, 519–525

    Google Scholar 

  72. M.A. Reed et al., Appl. Phys. Lett. 78, No.23, 3735–3737 (2001)

    Article  Google Scholar 

  73. M.A. Reed et al., IEDM Digest of technical papers, 227–230 (1999)

    Google Scholar 

  74. K.M. Roth et al., J. Vac. Sci. Technol. B 18, No.5, 2359–2364 (2000)

    Article  Google Scholar 

  75. T. Rueckes et al., Science 289, 94–97 (2000)

    Article  Google Scholar 

  76. J. W. Ward et al., Proceedings of the Non-Volatile Memory Technology Symposium, 34–38 (2004)

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Memory Development Center, Infineon Technologies Dresden, Dresden, Germany

    T. Mikolajick & C. -U. Pinnow

Authors
  1. T. Mikolajick
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. C. -U. Pinnow
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. Materials Analysis Department, AMD Saxony Limited Liability Company & Co. KG, Wilschdorfer Landstraße 101, D-01109, Dresden, Germany

    Ehrenfried Zschech (Dr. rer. nat.) (Dr. rer. nat.)

  2. IMEC, Kapeldreef 75, B-3001, Leuven, Belgium

    Caroline Whelan Ph.D.

  3. Flash Technology Predevelopment, Infineon Technologies SC300, Königsbrücker Straße 180, D-01099, Dresden, Germany

    Thomas Mikolajick (Dr.-Ing.) (Dr.-Ing.)

Rights and permissions

Reprints and permissions

Copyright information

© 2005 Springer-Verlag London Limited

About this chapter

Cite this chapter

Mikolajick, T., Pinnow, C.U. (2005). An Introduction to Nonvolatile Memory Technology. In: Zschech, E., Whelan, C., Mikolajick, T. (eds) Materials for Information Technology. Engineering Materials and Processes. Springer, London. https://doi.org/10.1007/1-84628-235-7_11

Download citation

  • DOI: https://doi.org/10.1007/1-84628-235-7_11

  • Publisher Name: Springer, London

  • Print ISBN: 978-1-85233-941-8

  • Online ISBN: 978-1-84628-235-5

  • eBook Packages: EngineeringEngineering (R0)

Publish with us

Policies and ethics

Search

Navigation