Summary
Advanced high-κ gate dielectric stacks directly deposited on Si or high mobility semiconductors such as Ge by MBE may offer the solution for aggressive scaling of future nanoelectronic devices. A new high-k dielectric, the pyrochlore La2Hf2O7, has been systematically investigated. This material can be prepared on Si(001) in a cube-on-cube epitaxial mode at high temperature around 770°C forming ultimately clean interfaces with the substrate. At lower temperature the material is amorphous having leakage current four to five orders of magnitude lower than conventional SiO2 with the same equivalent oxide thickness (EOT) of about 1 nm. Further scaling is expected to be difficult since only moderate values of the dielectric permittivity k around 18 can be obtained. On the other hand, HfO2 prepared by MBD on Ge(001) substrates forms sharp interfaces and has a relatively high κ∼25 which is close to the expected bulk value. Low EOT values around 0.75 nm have been obtained at very low leakage current of 4.5 × 10−4 A/cm2 at 1 V in accumulation. The observed low frequency behaviour of the high frequency (i.e 1 kHz) C-V curves in inversion was attributed to the high intrinsic carrier concentration in Ge due to the small energy band gap.
Keywords
- Molecular Beam Epitaxy
- Rapid Thermal Annealing
- Reflection High Energy Electron Diffraction
- Equivalent Oxide Thickness
- Advance CMOS
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
2003 Edition of the ITRS, International Technology Roadmap for Semiconductors (ITRS), Semiconductor International Association (2003), http://public.itrs.net/
R. Chau, International Workshop on Gate Insulators, Tokyo, Nov 6–8 (2003)
W. Tsai, L. Ragnarsson, P.J. Chen, B. Onsia, R.J. Carter, E. Cartier et al., Symposium on VLSI Technology Digest of Technical Papers, Kyoto, 21–22 (2003).
McKee, F.J. Walker, M. Chisholm, Phys. Rev. Lett. 81, 3014 (1998)
J. W. Seo, J. Fompeyrine, A Guiller, G. Norga, C. Marchiori, H. Siegwart et al., Appl. Phys. Lett. 83, 5211 (2003)
S. Guha, N.A. Bojarczuk, V. Narayanan, Appl. Phys. Lett. 80, 766 (2002)
N.A Bojarczuk, M. Copel, S. Guha, V. Narayanan, E.J. Preisler, F.M. Ross et al., Appl. Phys. Lett. 83, 5443 (2003)
Y. Nishikawa, N. Fukushima, N. Yasuda, K. Nakayama, S. Ikegawa, Japan J. Appl. Phys. 41, 2480 (2002)
A. Dimoulas, A. Travlos, G. Vellianitis, N. Boukos, K. Argyropoulos, J. Appl. Phys. 90, 4224 (2001)
A. Dimoulas, G. Vellianitis, A. Travlos, V. Ioannou-Sougleridis, A.G. Nassiopoulou, J. Appl. Phys. 92, 426 (2002)
G. Apostolopoulos, G. Vellianitis, A. Dimoulas, M. Alexe, R. Scholz, M. Fanciulli et al., Appl. Phys. Lett. 81, 3549 (2002)
V. Ioannou-Sougleridis, G. Vellianitis, A. Dimoulas, J. Appl. Phys. 93, 3982 (2003)
Fissel, H.J. Osten, E. Bugiel, J. Vac. Sci. Technol. B 21, 1765, and references therein (2003)
K. Eisenbeiser, J.M. Finder, Z. Yu, J. Ramdani, J.A. Curless, J.A. Hallmark, et al., Appl. Phys. Lett. 76, 1324 (2000)
Norga, A. Guiller, C. Marchiori, J.-P. Locquet, H. Siegwart, D. Halley et al., Mat. Res. Soc. Symp. Proc. 786, (2004)
Dimoulas, G. Vellianitis, G. Mavrou, G. Apostolopoulos, A. Travlos, C. Wiemer et al., Appl. Phys. Lett. 85, October 11 issue (2004)
H. Shang, K.L. Lee, P. Kozlowski, C. D’Emic, I. Babich, E. Sikorski et al., IEEE EDL 25, 135 (2004)
C. Chui, S. Ramanathan, B. Triplett, P. McIntyre, K. Saraswat, in IEDM Tech. Dig., 437–439 (2002)
D.S. Yun, C.H. Huang A. Chin, W.J. Chen, C.X. Zhu, B.J. Cho et al., IEEE EDL 25, 138 (2004)
Ritenour, S.Yu, M.L. Lee, N. Lu, W. Bai, A. Pister et al., IDEM Tec. Dig. 2003
Chui, H. Kim, P.C. McIntyre, K.C. Saraswat, IEEE EDL 25, 274 (2004)
H. Kim, C. Chui, K.C. Saraswat, P.C. McIntyre, Appl. Phys. Lett. 83, 2647 (2003)
D. Chi, C. Chui, K.C. Saraswat, B.B. Triplett, P.C McIntyre, J. Appl. Phys. 96, 813 (2004)
J.-H. Chien, N. A. Bojarczuk, Jr., H. Shang, M. Copel, J.B. Hannon et al., IEEE Trans. Electron. Dev. 51, 1441 (2004)
V.V. Afanas’ev, A. Stesmans, Appl. Phys. Lett. 84, 2319 (2004)
E.P. Gusev, H. Shang, M. Copel, M. Gribelyuk, C. D’Emic, P. Kozlowski et al., Appl. Phys. Lett. 85, 2334 (2004)
Apostolopoulos, G. Vellianitis, A. Dimoulas, J.C. Hooker, T. Conard, Appl. Phys. Lett. 84, 260 (2004)
E.H. Nicolian, J. Brews, in MOS Physics and Technology, Wiley, New York, 139 (1982)
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2005 Springer-Verlag London Limited
About this chapter
Cite this chapter
Dimoulas, A. (2005). Molecular-beam Deposition of High-k Gate Dielectrics for Advanced CMOS. In: Zschech, E., Whelan, C., Mikolajick, T. (eds) Materials for Information Technology. Engineering Materials and Processes. Springer, London. https://doi.org/10.1007/1-84628-235-7_1
Download citation
DOI: https://doi.org/10.1007/1-84628-235-7_1
Publisher Name: Springer, London
Print ISBN: 978-1-85233-941-8
Online ISBN: 978-1-84628-235-5
eBook Packages: EngineeringEngineering (R0)