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LED-Photodiode Opto-pairs

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Mid-infrared Semiconductor Optoelectronics

Part of the book series: Springer Series in Optical Sciences ((SSOS,volume 118))

6 Summary

We have demonstrated that InAs-based narrow gap heterostructures exhibit a potential barrier at the p-n junction up to 300°C and are able to operate in positive and negative luminescence modes in the 3–5 µm spectral range: the latter being preferable for elevated temperatures in terms of the output power. The optimization of mid-IR diode construction by implementing rare earth gettering, and the use of a broad mirror anode contact and graded bandgap or heavily doped “windows” has lead to “universal” flip-chip devices that are able to operate as efficient LEDs with Fabry-Perot resonant features with an output as high as ∼0.5 mW/A and as photodiodes with a detectivity as high as 2×1010 cm Hz1/2W−1. Optical pumping using a GaAs LED appears to be an efficient way of realizing an InAsSb emitter with a conversion efficiency ∼10 µW/A in the 8 µm spectral region. The coupling of the flip-chip devices with immersion lenses or fibres through the use of high index chalcogenide glass together with an appropriate choice of the bias direction at the p-n junction can yield an additional performance enhancement of a factor of 3–5. Optically coupled LED-PD pairs can be used as precise low voltage or current sensors of gases and liquids, e.g. with an expected limit of detection for methane gas as small as LOD Δf=1 MHz =18 ppm·cm·mA·s1/2

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  1. IOFFE Physico-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    Boris A. Matveev

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  1. Physics Department, Lancaster University, Lancaster, LA1 4YB, UK

    Anthony Krier PhD

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Matveev, B.A. (2006). LED-Photodiode Opto-pairs. In: Krier, A. (eds) Mid-infrared Semiconductor Optoelectronics. Springer Series in Optical Sciences, vol 118. Springer, London . https://doi.org/10.1007/1-84628-209-8_12

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