Abstract
We report a method for selective detecting viruses of plants using porous silicon at room temperature. The sizes of pores in porous silicon are larger than those of the researched viruses of plants. The samples of porous silicon have characteristic heterogeneity of porosity and chemical structure along its surface and depth. Adsorbed viruses of plants on the surface of porous silicon induce changes in the measured voltage-current and voltagefarad characteristics. Adsorption of viruses results in the growth of the parameter c (U) in the field of voltage greater than 2 V. The characteristic c (U) depends on type of the adsorbed viruses.
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© 2006 Springer
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VASHPANOV, Y.A., KONUP, I.P. (2006). INFLUENCE OF ADSORPTION OF VIRUSES OF PLANTS ON ELECTRIC PROPERTIES OF POROUS SILICON. In: Loureiro, J.M., Kartel, M.T. (eds) Combined and Hybrid Adsorbents. NATO Security through Science Series. Springer, Dordrecht . https://doi.org/10.1007/1-4020-5172-7_31
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DOI: https://doi.org/10.1007/1-4020-5172-7_31
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-5170-8
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