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CONCLUSION

  • Stephan Henzler
Part of the Advanced Microelectronics book series (MICROELECTR., volume 25)

Abstract

Ideal MOSFET scaling is impossible in the deep sub-micron regime due to some non scaling quantities like the thermal voltage, the built-in potential and the thickness of an atomic mono-layer. This results in continuously growing leakage currents which contribute more and more to the overall power consumption of digital integrated circuits.

Copyright information

© Springer 2006

Authors and Affiliations

  • Stephan Henzler
    • 1
  1. 1.Institute for Technical ElectronicsTechnical University Munich Theresienstr. 90MunichGermany

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