Abstract
Results on the Al- and Ni-induced crystallisation of a-Si deposited by RF magnetron sputtering under isothermal annealing in air, N2, H2+N2, H2 or vacuum are presented. The influences of different technological parameters - substrate temperature, metal concentration and annealing atmosphere - on the crystallinity of the poly-Si films are investigated. The results obtained are explained in terms of a metal induced crystallisation mechanism.
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Dimova-Malinovska, D. (2006). Metal Induced Crystallisation - an Advanced Method for Polycrystalline SI Films Preparation. In: Kassing, R., Petkov, P., Kulisch, W., Popov, C. (eds) Functional Properties of Nanostructured Materials. Nato Science Series, vol 223. Springer, Dordrecht. https://doi.org/10.1007/1-4020-4594-8_22
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DOI: https://doi.org/10.1007/1-4020-4594-8_22
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