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Literature
K. Petersen, Silicon as a mechanical material. Proceed. IEEE, El. Dev., 70(5), 1982, 420–457.
J.B. Agnell, S.C. Terry, P.W. Barth, Silicon micromechanical devices. Sc. Am., 44, 1983, 44–54.
J. Bryzek, Impact of MEMS technology on society. Sensors and Actuators A, 56, 1996, 1–9.
J.C. Greenwood, Silicon in mechanical sensors. J. Phys., 21, 1988, 1114–1128.
K. Petersen, Dynamic micromechanics on silicon, techniques and devices. IEEE Tran. El. Dev., ED-25, 1978, 1241–1250.
G.L. Pearson, Deformation and fraction of small silicon crystals. Act. Metalurgica, 5, 1957, 187–191.
J. Wolf, Silicon Semiconductors Data. Pergamon Press, New York, 1969.
J. Wortman, R.A. Evans, Young’s modulus, shear modulus and Poisson’s ratio in silicon and germanium. J. Appl. Phys., 36, 1965, 153–156.
J. Frühauf, E. Gärtner, E. Jänsch, Silicon as a plastic material. J. Micromech. Microeng., 9, 1999, 305–312.
H.J. McSkimin, P. Andreatch, Elastic modulus of silicon vs. hydrostatic pressure at 25°C and 195.8°C. J. Appl. Phys., 35,7, 1964, 2161–2165.
S.P. Nikanarov, Yu.A. Burenkov, A.V. Stepanov, Uprugije swojstwa kriemni. Fiz. Twierd.T iela, 13, 1971, 3001–3004.
X. Ding, W.H. Ko, J.M. Mansour, Residual stress and mechanical properties of boron doped p+ silicon films. Sensors and Actuators A, 21-23, 1990, 866–871.
H.J. McSkimin, Measurement of elastic constants at low temperatures by means of ultrasonic waves-data for silicon and germanium single crystals and for fused silica. J. Appl. Phys., 24,8, 1953, 988–997.
J.J. Hall, Electronic effects in elastic constants of n-type silicon. Phys. Rev., 161(3), 1967, 756–761.
F. Maseeh, S.D. Senturia, Plastic deformation of highly doped silicon. Sensors and Actuators, A, 21-23, 1990, 861–865.
W. Chu, Effect of oxidation on residual stress distribution through the thickness of p+ silicon films. Techn. Dig. IEEE Solid-State Sensors and Actuators Workshop, 1982, 90–93.
L. Csepregi, Micromechanics: a silicon microfabrication technology. Microelectronics Eng., 3, 1985, 221–234.
M. Mehregany, Silicon microactuators, in: Advances in actuators, A. Dorey, J. Moore (eds.). IOP Publishing, 1995, 135–178.
X. Ding, W.H. Ko, Y. Niu, W. He, A study on silicon-diaphragm buckling. Proceed. IEEE Transducers, 1990, 128–131.
J. Bryzek, K. Petersen, J. Mallon, L. Christell, F. Pouhmaradi, Silicon sensors and microstructures. Nova Sensor, Fremont, CA, 1991, USA.
Special issue on three dimensional device structures IEEE Tran. El. Dev., ED-25, 10, 1975.
K.D. Wise, S.K. Clark, Diaphragm formation and pressure sensitivity in batch-fabricated silicon pressure sensor. Int. Electron. Dev. Meeting (IEDM), Techn. Dig., IEEE, 1978, 96–99.
A.I. Stoller, The etching of deep vertical patterns in silicon. RCA Review, 6, 1970, 271–275.
Special issue on solid-state sensors, actuators and interface electronics. IEEE Trans. El. Dev. ED-26, 12, 1979.
B. Puers, E. Peeters, W. Sansen, Wet and dry etching experience for sensor micromachining. J. Micromech. Microeng., 13, 1991, 443–446.
G. Delapierre, Micro-machining: A survey of the most commonly used processes. Sensors and Actuators A, 17, 1989, 123–138
J.M. Crishal, A.L. Harrington, A selective etch for elemental silicon. J. Electrochem. Soc., 109, 1962, 71C.
R.M. Finne, D.L. Klein, A water amine complexing agent system for etching silicon. J. Electrochem. Soc., 114, 1967, 965–970.
H.J. Declerg, L. Gerzberg, J.D. Meindl, Optimization of the hydrazine water solution for anisotropic etching of silicon in integrated circuit technology. J. Electrochem. Soc., 122, 1979, 545–552.
M. Mehregany, S.D. Senturia, Anisotropic etching of silicon in hydrazine. Sensors and Actuators A, 13,4, 1988, 375–390.
Yong Ping Xu, Ruey Shing Huang, Anodic dissolution and passivation of silicon in hydrazine. J. Electrochem. Soc., 137, 1990, 948–953.
J. C. Greenwood, Ethylene diamine-catechol-water mixture shows preferential etching of p-n junctions. J. Electrochem. Soc. Electrochem. Techn. Lett., 116,9, 1969, 1325–1326.
A. Reisman, M. Berkenblit, S.A. Chan, F.B. Kaufman, D.C. Green, The controlled etching of silicon in catalyzed ethylenodiamine-pyrocatechol-water solutions. J. Electrochem. Soc., 126, 1979, 1406–1415.
A. Bough, Ethylenodiamine-pyrocatehol mixtures-water mixtures shows etching anomaly in boron-doped silicon. J. Electrochem. Soc., 118, 1971, 401.
N.F. Raley, Y. Sugiyama, T. van Duzer, (100) silicon etch-rate dependence on boron concentration in ethylene-diamine-pyrocatechol-water solutions. J. Electrochem. Soc., 131, 1984, 161–171.
G. Kaminsky, Micromachining of silicon mechanical structures. J. Vac. Sci. Technol., B-3, 1985, 1015–1024.
H. Linde, L. Austin, Wet silicon etching with aqueous-amine gellates. J. Electrochem. Soc., 139, 1992, 1170–1174.
U. Schnakenberg, W. Benecke, P. Lange, TMAH etchants for silicon micromachining. Tech. Digest, 6th Int. Conf. Solid St. Sensors and Actuators (Transducer 91) San Francisco CA, USA, 1991, 815–818.
A. Merlos, M.C. Acero, M.H. Bao, J. Bausells, J. Estere, TMAH/IPA anisotropic etching characteristic. Sensors and Actuators A, 37-38, 1993, 737–743.
H. Linde, L. Austin, Catalytic control of anisotropic silicon etching. Sensors and Actuators A, 49, 1995, 181–185.
A. Merlos, M.C. Acero, M.H. Bao, J. Bausells, J. Estere, A study of undercutting characteristics in the TMAH-IPA system. J. Micromech. Microeng., 2, 1992, 181–183.
I. Zubel, M. Kramkowska, The effect of isopropyl alcohol on etching rates roughness of (100) Si surface etched in KOH and TMAH. Sensors and Actuators A, 93, 2001, 138–147.
O. Tabata, R. Asahi, H. Funabashi, S. Sugiyama, Anisotropic etching of silicon in (CH3)4OH solutions. Tech. Digest, 6th Int. Conf. Solid St. Sensors and Actuators (Transducer 91) San Francisco CA, USA, 1991, 811–814.
P.J. Holmes, The Electrochemistry of Semiconductors, P.J. Holmes (ed.). Academic Press Ltd., London, 1962.
D.B. Lee, Anisotropic etching of silicon. J. Appl. Phys., 40, 1969, 4569–4574.
J.B. Price, Anisotropic etching of silicon with KOH-H2O-isopropyl alcohol. In Semiconductor silicon. The Electrochemical Soc. Softbond Symposium Proceed, Series, Princetown, New York, USA, H.R. Huft, R.R. Burgess (eds.), 1973, 339–353.
K.E. Bean, Anisotropic etching of silicon. IEEE Tran. El. Dev., ED-25, 1978, 1185–1193.
E. Bassous, Fabrication of novel three dimensional microstructures by the anisotropic etching of (100) and (111) silicon. IEEE Tran. El. Dev., ED25, 1978, 1178–1185.
J.K. Kendall, Vertical etching of silicon at very high aspect ratios. Ann. Rev. Materials Scientific, 9, 1979, 373–378.
W.H. Ko, D.G. Fleming, T.L. Poteat, Submicron accuracies in anisotropic etched silicon piece parts-a case study. In: Micromachining and Micropackaging of Transducers, C.D. Fung (ed.). Elsevier, 1985, 151–158.
H. Seidel, L. Csepregi, A. Hauberger, H. Baumgartel, Anisotropic etching of crystalline silicon in alkaline solutions (Part I). J. Electrochem. Soc., 137, 1990, 3612–3626.
E. Herr, H. Baltes, KOH etch rates of high index planes in silicon. Sensors and Actuators A, 31, 1992, 283–287.
H. Camon, Z. Moktadir, Atomic scale simulation of silicon etched in aqueous KOH solution. Sensor and Actuators A, 46-47, 1995, 25–28.
H.L. Offereins, K. Kuhl, H. Sandmaier, Methods of fabrication of convex corners in anisotropic etching of (100) silicon in aqueous KOH. Sensors and Actuators A, 25-27, 1991, 9–13.
I. Barycka, I. Zubel, Silicon anisotropic etching in KOH-isopropanol etchant. Sensors and Actuators A, 48, 1995, 229–238.
E.D. Palik, H.F. Gray, P.B. Klein, A Raman study of etching silicon in aqueous KOH. J. Electrochem. Soc., 130, 1983, 956–959.
U. Schnekenberg, W. Benecke, B. Löckel, S. Ullerich, P, Lange, NH4OH based etchants for silicon micromachining: influence of additives and stability of passivation layers. Sensors and Actuators A, 25-27., 1991, 1–7.
U. Schnekenberg, W. Benecke, B. Lóckel, NH4OH-based etchants for silicon micromachining. Sensors and Actuators A, 21-23, 1990, 1031–1035.
Ch. Ju, P.J. Hesketh, Measurements of anisotropic etching of a single crystal silicon sphere in aqueous cesium hydroxide. Sensors and Actuators A, 33, 1992, 191–196.
T. Wang, S. Surve, P.J. Hesketh, Anisotropic etching of silicon in rubidium hydroxide. J. Electrochem. Soc., 141(9), 1994, 2493–2497.
M. Elwespoek, The form of the etch minima in wet chemical anisotropic etching of silicon. J. Micromech. Microeng., 6, 1996, 405–409.
P. Allongue, V. Costa-Kieling, H. Gerischer, Etching of silicon in NaOH solutions. J. Electrochem. Soc., 140, 1993, 1009–1026.
J. Dziuban, Microwave enhanced wet anisotropic etching of monocrystalline silicon. Proceed. Eurosensors XIII, 13rd Europ. Conf. on Solid-St. Transducers, September 12-15, den Haag, Holland, 1999, 337–338.
H. Linde, L. Austin, Catalytical control of anisotropic silicon etching. Sensors and Actuators A, 49, 1995, 181–187.
C. Moldovan, R. Iosub, D. Dascaln, G. Nechifor, Anisotropic etching of silicon in a complexant redox alkaline system. Sensors and Actuators B, 58, 1999, 438–449.
K. Sato, M. Shikida, T. Yamashiro, M. Tsukanawa, S. Ito, Characterization of anisotropic etching of single crystal silicon: surface roughening as function of crystallographic orientation. IEEE Workshop MEMS 98, January 25–29, Heidelberg, Germany, 201–206.
Ch. Merveille, Surface quality of (111) side-walls in KOH etched cavities. Sensors and Actuators A, 60, 1997, 2444–248.
E.D. Palik, O.J. Glembocki, L. Heard jr, P.S. Burno, L. Tenerz, Etching roughness for (100) silicon surfaces in aqueous KOH. J. Appl. Phys., 70(6), 1991, 3291–3300.
Y.K. Bhatnager, A. Nathan: On pyramidal pretrusions in anisotropic etching of (100) silicon. Sensors and Actuators A, 36, 1993, 233–240.
S.A. Campbell, K. Cooper, S.N. Port, D.J. Schiffrin, Inhibition of pyramid formation in the etching of Si p (100) in aqueous potassium hydroxide-isopropanol. J. Micromech. Microeng., 5, 1995, 209–218.
T.A. Kwa, R.F. Wolfenbuttel, Effect of solution contamination on etched silicon surfaces. J. Micromech. Microeng., 5, 1995, 95–97.
C. Merveille, J. Weber, Surface quality of (111) side-walls in KOH solutions. Proceed. Eurosensors X, 10th Europ. Conf. on Solid-St. Transducers, Sept., 8—11, 1996, Leuven Belgium, 485–488.
E.D. Palik, V.M. Bermudez, O.J. Glembocki, Ellipsometric study of orientation-dependent etching of silicon in aqueous KOH. J. Electrochem. Soc., 132, 1985, 871–994.
P.J. Hesketh, Ch. Ju, S. Gowda, E. Zanoria, S. Danyluk, Surface free energy model of silicon anisotropic etching. J. Electrochem. Soc., 140, 1993, 1080–1085.
M. Elwenspoek, On the mechanism of anisotropic etching of silicon. J. Electrochem. Soc., 140, 1993, 2075–2080.
C. Mihalcea, A. Hőlz, M. Kuhawara, J. Tominaga, E. Oesterschultze, N. Atada, Improved anisotropic deep etching in KOH solutions to fabricate highly speculative surfaces. Microel. Engineer., 57-58, 2001, 781–786.
I. Zubel, Three dimensional silicon structures anisotropic (wet) etching for microelectronic applications. Oficyna Wydawnicza Politechniki Wroclawskiej, Wroclaw, Poland, 2004,.
I. Barycka, H. Teterycz, Z. Znamirowski, Sodium hydroxide solution shows selective etching of boron doped silicon. J. Electrochem. Soc., 126(2), 1979, 345–346.
V. Lehmann, K. Miatui, D. Feijo, U. Gösele, Implanted carbon, an effective etch-stop in silicon. J. Electrochem. Soc., 138, 1991, L-3–L-4.
M.C. Acero, J. Esteve, J. Montserrat, J. Bausells, A. Perez-Rodriguez, A. Romano-Rodriguez, J.R. Monante, Anisotropic etch-stop properties of nitrogen implanted silicon. Sensors and Actuators A, 45, 1994, 219–225.
H. Seidel, L. Csepregi, A. Henberger, H. Baumgartel, Anisotropic etching of silicon in alkaline solutions (Part II). J. Electrochem. Soc., 137, 1990, 3626–3632.
E.D Palik, J.W. Faust jr, H.F. Gray, R.F. Greene, Study of the etch-stop mechanism in silicon. J. Electrochem. Soc., 129, 1982, 2051–2059.
E.D. Palik, V.M. Bermudez, O.J. Glembocki, Ellipsometric study of the etch stop mechanism in heavily doped silicon. J. Electrochem, Soc., 132, 1985, 135–141.
E.D. Palik, V.M. Bermudez, O.J. Glembocki, Ellipsometric study of bias dependent etching and the etch-stop mechanism for silicon in aqueous KOH. In: Micromachining and Micropackaging of T ransducers, W.H. Ko, D.G. Fleming (eds.). Elsevier, 1985.
H.A. Waggener, Electrochemically controlled thinning of silicon. Bell. System Techn. J., 50, 1970, 473–475.
M.J.J. Theusninssen, J.A. Appels, W.H.C.G. Yerhuylen, Application of preferential electrochemical etching of silicon to semiconductor device technology. J. Electrochem. Soc., 117, 1970, 959–965.
H.J.A. von Dijk, J. de Jonge, Preparation of thin silicon crystals by electrochemical thinning of epitaxially grown structures. J. Electrochem. Soc., 117, 1970, 553–554.
R.L. Meck, Electrochemically thinned N/N+ epitaxial silicon method and application. J. Electrochem. Soc., 118, 1971, 1240–1246.
A.I. Stoller, R.F. Speers, S. Opresko, A new technique for etch thinning of silicon wafers. RCA Review, 1970, 265–270.
T.N. Jackson, M.A. Tischler, K.D. Wise, An electrochemical p-n junction etch-stop for the formation of silicon microstructures. IEEE Trans. El. Dev. EDL-2, 2, 1981, 44–45.
J.W. Faust Jr, E.D. Palik, Study of the orientation dependent etching and initial anodization of Si in aqueous KOH. J. Electrochem. Soc., 130, 1983, 1413–1420.
J. Glembocki, R.E. Stahibush, M. Tomkiewicz, A bias-dependent etching of silicon in aqueous KOH. J. Electrochem. Soc., 132, 1985, 145–151.
P.M. Sarro, A.W. van Herwaarden, Silicon cantilever beams fabricated by electrochemically controlled etching for sensor fabrication. J. Electrochem. Soc., 133, 1986, 1724–1728.
R.L. Smith, B. Kloeck, N.F. de Roij, S.D. Collins, The potential dependence of silicon anisotropic etching in KOH in 60°C. J. Electroanal. Chem. and Interfacial Chem., 238, 1987, 103–113.
M. Hirata, S. Suwanoro, H. Tanigawa, Diaphragm thickness control in silicon pressure sensors using an anodic oxidation etch stop. J. Electrochem. Soc., 134, 1987, 2037–2041.
M. Hirata, K. Suzuki, H. Tanigawa, Silicon diaphragm pressure sensors fabricated by anodic oxidation etch-stop. Sensor and Actuators A, 13, 1988, 63–69.
Y. Lindenen, L. Tenerz, B. Hök, Fabrication of three dimensional structures by means of doping selective etching (DSE). Sensors and Actuators A, 16, 1989, 67–81.
B. Kloek, S.D. Collins, N.F. de Roij, R.L. Smith, Study of electrochemical etch-stop for high precision thickness control of silicon membranes. IEEE Trans. El. Dev., ED-36, 1989, 663.
E.D. Palik, O.J. Glembocki, R.E. Stahibush, Fabrication and characterization of Si membranes. J. Electrochem. Soc., 135, 1988, 3126–3134.
H. Seidel, The mechanism of anisotropic electrochemical silicon etching in alkaline solutions. Techn. Dig. 5th Int. Conf. Solid St. Sensors and Actuators (Transducers 90), Yokohama, Japan, 1990, 86–87.
H. Seidel, The mechanism of electrochemical anisotropic etching of silicon and its application. In: IntegratedMicromotion Systems, F. Harashima (ed.). Elsevier, 1990, 51–68.
D. Lapadatu, R. Puers, On the anodic passivation of silicon in aqueous KOH solutions. Sensor and Actuators A, 60, 1997, 191–196.
G.K. Celler, L.E. Trimble, J. Frackoviak, C.W. Jergensen, R.R. Kola, A.E. Nivembre, G.R. Weber, Formation of monolithic masks for 0.25 mm X-Ray lithography. Appl. Phys. Lett., 59(24), 1991, 3105–3107.
E.L. Demar, C.M.A. Ashruf, P.J. French, P.M. Sarro, Thickness of membranes fabricated with galvanic etch-stop: uniformity and reproducibility. Proceed. Eurosensors XII, 12th Europ. Conf. on Solid-St. Transducers, 13–16 Sept., Southampton, United Kingdom, M.N. White (ed.), IOP Series 1998, 3–6.
H. Teterycz, J. Dziuban, R. Walczak, Method of silicon etching. Patent application 353673, 29 April 2002.
J. Dziuban, Microwave enhanced wet anisotropic etching of monocrystalline silicon. Sensors and Actuators A, 85, 2000, 133–138.
J. Dziuban, R. Parosa, E. Reszke, A means for wet anisotropic etching of mono-crystalline semiconductor material and a device implementing this means. PCT No WO 00/34993, 15 June 2000.
J. Dziuban, R. Walczak, Fast wet anisotropic etching process for deep micromachining of single crystal silicon. World Microtech. Cong. Proceed. MICRO., tec 2000, Expo 2000, Hannover, Germany, 609–613.
J. Dziuban, R. Walczak, Etching microwave silicon au][EMSi]-microwave enhanced fast deep anisotropic etching of silicon for micro-electromechanical systems. Sensors and Materials, 15(1), 2001, 41–55.
R. Walczak, J. Dziuban, Microwave enhanced wet anisotropic etching of silicon utilizing a memory effect of OH activation — a remote E2MSi process. Sensors and Actuators A, 116, 2004, 161–170.
H.R. Robbins, B. Schwartz, Chemical etching of silicon — I. The system, HF, HNO3 and H2O, J. Electrochem. Soc., 106, 1959, 505–508.
H.R. Robbins, B. Schwartz, Chemical etching of silicon — II. The system, HF, HNO3, H2O and HC2C3O2, J. Electrochem. Soc., 107, 1960, 108–111.
B. Schwartz, H.R. Robbins, Chemical etching of silicon — III. A temperature study in the acid system, J. Electrochem. Soc., 108, 1961, 365–372.
B. Schwartz, H.R. Robbins, Chemical etching of silicon — IV. Etching technology, J. Electrochem. Soc., 123, 1976, 1903–1909.
A. Bochenschuetz, W. Krusemark, K. Loeher, W. Mussinger, Activation energies in the chemical etching of semiconductors in HNO3-HF-CH3COOH. J. Electrochem. Soc., 1149), 1976, 970–973.
L. Nieradko, Microelectronic methods of modification of separation properties of micromechanical, capillary chromatographic columns. Thesis, The Wroclaw University of Technology, Wroclaw, Poland, 2001, 43–51
B. Puers, W. Sansen, Compensation structures for convex corner micromachining in silicon. Sensors and Actuators A, 21-23, 1990, 1036–1039.
H.L. Offereins, H. Sandmaier, K. Maruscyk, K. Kuhl, A. Plettner, Compensating corner undercutting of (100) silicon in KOH. Sensors and Materials, 3, 1992, 127–144.
M.M. Abu-Zeid, Corner undercutting in anisotropically etched isolation contours. J. Electrochem. Soc., 131, 1984, 2138–2142.
E.G. van Hal, Advanced packaging of ISFET S: design, encapsulation and bonding, chapter 5: Anisotropic etching of silicon in KOH and TMAH solutions. Thesis, 1994, 99–113.
M. Bao, Chr. Burrer, J. Estere, J. Baussels, S. Marco, Etching front control of <110> strips for corner compensation. Sensors and Actuators A, 37-38, 1993, 727–732.
J. Dziuban, A. Górecka-Drzazga, I. Barycka, I. Zubel, Compensation of corners in bossed structures of pressure sensors. Proceedings of IVth Conf. COE 96, 13–16 May, Szczyrk, Poland, 1996, 174–177.
D. Zielke, J. Fruhauf, F. Röγler, Simulation of the orientation dependent etching of complex mask structure. Tech. Dig. 6th Micromechanics Europe Workshop MME 95, Copenhagen, Danmark, 3—5 Sept., 1995, 164–167.
I. Barycka, J. Dziuban, M. Kramkowska, I. Zubel, Compensation of convex corners in sensors with bossed structure etched in TMAH and TMAH/IPA solutions. Mat. SPIE, 4516, 2001, 56–65.
J. Frühauf, K. Trautman, J. Wittig, D. Zieike, A simulation tool for orientation dependent etching. J. Micromech. Microeng., 3, 1993, 113–115.
D. Zielke, J. Frühauf, Determination of rates for orientation-dependent etching. Sensors and Actuators A, 48, 1995, 151–156.
I. Barycka, I. Zubel, Silicon anisotropic etching in alkaline solutions I. The geometric description of figures developed under etching Si (100) in various solutions. Sensors and Actuators A, 70, 1998, 250–259.
G.K. Mayer, H. Loffereins, A. Sandmeier, K. Kuhl, Fabrication of non-underetched convex corners in anisotropic etching of (100) silicon in aqueous KOH with respect to novel micromechanical devices. J. Electrochem. Soc., 137, 1990, 3947–3951.
E. Herr, H. Baltes, KOH etch rates of high-index planes from mechanically prepared silicon crystals. Tech. Dig. 6th Int. Conf. Solid St. Sensors and Actuators (Transducers 91), San Francisco, CA, USA, 24—28 June, 1995, 807–810.
Xin Xin Li, M. Bao, S. Shen, Maskless etching of three-dimensional silicon structures in KOH. Sensors and Actuators A, 57, 1996, 47–52.
I. Zubel, Silicon anisotropic etching in alkaline solution II. On the possibility of spatial structures forming on the course of Si (100) anisotropic etching in KOH and KOH + IPA solutions. Sensors and Actuators A, 84, 2000, 116–125.
O. Than, S. Büttgenbach, Simulation of anisotropic chemical etching of crystalline silicon using a cellular automata model. Sensors and Actuators A, 1995, 85–89.
J.H. Jerman, The fabrication and use of micromachined corrugated membrane. Sensors and Actuators A, 23, 1990, 998–992.
D. Lapadatu, A. Pyka, J. Dziuban, R. Puers, Corrugated silicon nitride membranes on suspensions in micromachined silicon accelerometers. J. Micromech. Microeng., 6, 1996, 73–76.
C.S. Smith, Piezoresistance effect in germanium and silicon. Phys. Rev., 94, 1954, 42–49.
T. Pancewicz, R. Jachowicz, Z. Gniazdowski, Z. Ażgin, P. Kowalski, The empirical verification of the FEM model of semiconductor pressure sensor. Sensors and Actuators A, 76, 1999, 260–265.
M. Bao, Micro Mechanical Transducers, Pressure Sensors, Accelerometers and Gyroscopes. Elsevier, 2000.
M. Bao, W. Qi, Y. Wang, Geometric design rules of four terminal gauge for pressure sensor. Sensors and Actuators A, 18, 1989, 149–156.
N. Lu, L. Gerzberg, C. Lu, J. Meindl, Modeling and optimalization of monolithic polycrystalline silicon resistors. IEEE Trans. on Electron Dev., ED-28, 1981, 818–830.
J. Dziuban, A. Górecka-Drzazga, U. Lipowicz, Silicon pressure sensor for biomedicine applications. Proceed. Microelectronic 92, Warsaw, Poland, 1992, Proc. SPIE, Vol. 1783, 32–328.
J. Dziuban, A. Górecka-Drzazga, U. Lipowicz, W. Indyka, J. Wąsowski, Self-compensating piezoresistive pressure sensor. Sensors and Actuators A, 41-42, 1994, 368–374.
J. Dziuban, A. Górecka-Drzazga, J. Wąsowski, U. Lipowicz, Simple method of compensation of off-set voltage of piezoresistive pressure sensors and its temperature drift (in Polish). Proceed. of COE 94, Zegrze, Poland, 1994, 235–238.
J. Thomas, R. Kühnlod, R. Schunpp, H. Ryssel, A silicon vibration sensor for tool state monitoring working in the high acceleration range. Sensors and Actuators, A, 85, 2000, 194–201.
K. Ikeda, Silicon pressure sensor integrates resonant strain gage on diaphragm. Proceed. Transducers ’89 and Eurosensors III, the 5th Int. Conf. On Solid-St. Sensors and Actuators, Montreux, Switzerland, June 25—30, 1989, 100–101.
Catalogue of Yokogawa Co., The first and single digital pressure transducer. Yokogawa Austria GmbH, Franzensbruckestrasse 26, P.O.B 159, A 1021 Wien.
J. Dziuban, A. Górecka-Drzazga, U. Lipowicz, Silicon optical pressure sensor. Sensors and Actuators A, 32, 1992, 628–631.
W. Lang, K. Kuehl, A micro-thin bolometer for radiation thermometry of ambient temperature. Proceed. Transducers ’89 and Eurosensors III, the 5th Int. Conf. On Solid-St. Sensors and Actuat. Montreux, Switzerland, June 25—30, 1989, 173.
G.A. Racine, Low temperature operating silicon bolometers for nuclear radiation detector. Proceed. Transducers ’89 and Eurosensors III, the 5th Int. Conf. On Solid-St. Sensors and Actuat. Montreux, Switzerland, June 25—30, 1989, 174–175.
A.W. Herwaarden, Floating-membrane thermal vacuum sensor. Sensors and Actuators A, 17, 1989, 259–267.
J.S. Skie, P.K. Weng, Fabrication of micro-bolometer on silicon substrate by anisotropy etching technique. Proc. Transducers 91, CH 2817, 627–630.
P.B. Zou, J.T. Pang, Z.F. Wang, X. Qian, H.Q. Gong, M.K. Lim, Z.J. Li, Single chip fabrication of integrated fluid systems (IFS). Proceed. IEEE Workshop MEMS 98, Heidelberg, Germany, January 25—29, 1998, 448–453.
P. Krause, E. Obermeier, W. Wehl, Backshooter-a new smart micromachined single-chip inkjet print head. Proceed. Transducers 95, Eurosensors IX, Stockholm, Sweden June 25—29, 1995, 325–328.
D.J. Coe, M.G. Allem, B.L. Smith, A. Glecer, Addreasable micromachined jet arrays. Proceed. Transducers 95, Eurosensors IX, Stockholm, Sweden June 25—29, 1995, 329–331.
M. Alavi, S. Buttgenbach, A. Schumacher, H.J. Wagner, Fabrication of microchannels by laser machining and anisotropic etching of silicon. Sensors and Actuators A, 32, 1992, 299–302.
M. Alavi, Th. Fabula, A. Schumacher, H.-J. Wagner, Monolithic microbridges in silicon using laser machining and anisotropic etching. Sensors and Actuators A, 37-38, 1993, 661–665.
Y. Bäcklund, Micromechanics in optical systems — with focus on telecom systems. J. Micromech. Microeng., 7, 1997, 93–98.
C. Strandman, Y. Bücklund, Passive and fixed alignment of devices using flexible silicon elements formed by selective etching. J. Micromech. Microeng., 8, 1998, 39–44M.
Hoffmann, P. Kopka, T. Gross, E. Voges, Optical fiber switches based on full wafer silicon micromachining. J. Micromech. Microeng., 9, 1999, 151–155.
Ch. Gorecki, Optical waveguides and silicon-based micromachined architecture. In: MEMS and MOEMS technology and applications, P. Rai-Choudhury (ed.). SPIE Press, 2000, 209–300.
M. Hoffmann, E. Voges, Bulk silicon micromachining for MEMS in optical communication systems. J. Micromech. Microeng., 12, 2002, 349–360.
Ch. Gorecki, M. de Labachelerie, L. Thierry, The role of silicon micromachining in optical fiber sensing technologies. IEEE Sensors Journal, 3(1), 2003, 121–130.
R.M. Bostockë, J.D. Collier, R. Jones, D.F. Moore, J.E. Townsend, Silicon nitride microchips for the kinematic location of optic fibres in silicon V-shaped grooves. J. Micromech. Microeng., 8, 1998, 343–360.
M. de Labachelerie, N. Kaou, V. Armbruster, J.-C. Jeannot, P. Mollier, H. Porte, N. Devoldere, A micromachined connector for the coupling of optical waveguides and ribbon optical fibers. Sensors and Actuators A, 89, 2001, 36–42.
J. Dziuban, A micromachined silicon accelerometer with a movable mercury ball of micrometer size. MST News Poland, 1996, nr 4, 9–11.
F. Krull, Nutzen der dritten Dimension. Technische Rundschau, No. 11, 1995.
T.S.J. Lammerink, Micro-liquid flow sensor. Sensors and Actuators A, 37-38, 1993, 45–50.
S. Bouwstra, P. Kemna, R. Legtenberg, Thermally excited mass flow sensor. Sensors and Actuators A, 20, 1989, 213–223.
M.A. Gajda, H. Ahmed, Applications of thermal sensors on membranes. Sensors and Actuators A, 49, 1995, 1–9.
D. Maser, R. Lenggenhager, H. Baltes, Silicon gas flow sensor using industrial CMOS and bipolar IC technology. Sensors and Actuators A, 25-27, 1991, 577–581.
J. Robadey, O. Paul, H. Baltes, Two-dimensional integrated gas flow sensors by CMOS IC technology. J. Micromech. Microeng., 1995, 243–250.
T. Laurell, L. Rosengren, A micromachined enzyme reactor in (110) oriented silicon. Sensors and Actuators B, 18-19, 1994, 614–617.
T. Laurell, L. Rosengren, J. Drott, A micromachined glucose oxidase enzyme reactor. Proceed. μTAS 94 Workshop, Twente, 21—22 November, 1994, 227–231.
A. Manz, E. Verpoorte, B.E. Raymond, C.S. Eftenhauser, N. Burggraf, H.M. Widmer, μTAS: Miniaturized chemical analysis systems. Proceed. μTAS 94 Workshop, Twente, 21—22 November, 1994, 5–27.
S. Böhm, W. Olthuis, P. Bergveld, A μTAS based on microdialysis for on-line monitoring of critically relevant substances. Proceed. μTAS 94 Workshop, Twente, 21—22 November, 1994, 31–34.
I.K. Glasgow, H.Ch. Zeringue, D.J. Beebe, S.-J. Choi, J.T. Lyman, M.B. Wheeler, Individual embryo transport and retention on a chip. Proceed. μTAS 94 Workshop, Twente, 21—22 November, 1994, 199–206.
P. Dario, M.C. Carrozza, A. Benvenuto, A. Menciassi, Micro-systems in biomedical applications. J. Micromech. Microeng., 10, 2000, 235–244.
T.B. Taylor, P.M. St. John, M. Albin, Micro-genetic analysis systems. Proceed. μTAS 98 Workshop, Banff, 13μ16 October, 1998, 261–266.
H. Andersson, A. Ahmadian, W. van der Wijngaart, P. Nilsson, P. Enoksson, M. Uhler, G. Stemme, Micromachined flow-through filter-chamber for solid state phase DNA analysis. Proceed. μTAS 2000 Conference Enschede, 14—15 May, 2000, 473–476.
S. Bargiel, A. Gorecka-Drzazga, J. Dziuban, P. Prokaryn, M. Chudy, A. Dybko, Z. Brzozka, Nanoliter spectrofluorometric detector for flow systems. Proceed. 17 European Conference on Solid-State Transducers Eurosensors XVII, Guimaraes, Portugal, 21—24 Sept., 2003, 394–395.
J. Roeraade, M. Stjemström, A. Emmer, E. Litborn, U. Lindberg, Nanochemistry and nanoseparations of biomolecules, H.M. Widmer, E. Verpoorte, S. Bernold (eds.). Anal. Meth. Instrum., Spec. Issue, μTAS 96, Basel 19—22 November, 1996, 34–38.
C. Grosjean, G. Lee. W. Hong, Y.C. Tai, C.M. Ho, Micro Balloon Actuators for Aerodynamic Control. Proceed, 11th Annual. Int. Workshop MEMS 98, January 25—29, 1998, Heidelberg, Germany, 166–171.
E. Valderrama, P. Garrido, P. Heiduschka, A. Harsch, W. Göpel, Microfabrication and characterization of microelectrode arrays for in-vivo nerve signal recording. Proceed. Transducers 95, Eurosensors IX, Stockholm, June 25—29, 1995, 63–66.
P. Dario, M. Cocco, G. Soldani, E. Valderrama, J.U. Meyer, T. Giesler, H.-J. Beutel, H. Scheithauer, M. Alavi, V. Bulker, Technology and fabrication of hybrid neural interfaces for the peripheral nervous system. Microsystem Technologies Berlin, Oct., 19—21, 1994, 417–426.
K. Najafi, K. Wise, A high-yield IC compatible multichannel neuraling array. IEEE Tran. El. Dev., ED-32,7, 1985, 1206–1211.
D.W. de Lima Monteiro, O. Akhzar-Mehr, P.M. Sarro, G. Vdovin, Single mask fabrication of aspherical optics using KOH anisotropic etching of silicon. Optic Express, 11(18), 2003, 2244–2252.
G. Vdovin, O. Akhzar-Mehr, P.M. Sarro, D.W. de Lima Monteiro, M.Y. Loktev, Arrays of spherical micromirrors and molded lenses fabricated with bulk micromachining. In: MEMS/MOEMS Advances in photonic communications, sensing, metrology, packaging and assembly, U. Behringer, B. Courtois, A.M. Khounsary, D.G. Uttamchandani (eds.). Proc. SPIE 4945, 2003, 107–111.
A. Görecka-Drzazga, J. Dziuban, U. Lipowicz, Plasma etch for micromechanics integrated (in Polish). Proceed. of IV Conf. ELTE 90, 11—14 Sept., 1990, Książ, Poland, 72–74.
H.V. Allen, S.C. Terry, J.W. Knutti, Understanding silicon accelerometers. Sensors, September 1989.
G. Stemme, Resonant silicon sensors. J. Micromech. Microeng., 1, 1991, 113–125.
M. Tortonese, H. Yamada, R.C. Barret, C.F. Quate, Atomic force microscopy using a piezoresistive cantilever. Proceed. IEEE Transducers ’91, CH2817, 448–451.
C.J. Welham, J. Greenwood, M. Bertioli, A lateral resonant pressure sensor fabricated via fussion bonding, wafer thinning and reactive-ion-etching. Proceed. Eurosensors XII, Southhampton, 13—16 September, 1998, UK, IOP Sensor-Series, 353–356S.
Bouwstra, R. Laktenberg, H.A.C. Tilmans, Resonating micro-bridge mass flow sensor. Sensors and Actuators A, 21-23, 1990, 332–335.
H.P. Lang, F.M. Battiston, M.K. Baller, R. Berger, J.-P. Ramseyer, P. Fornaro, E. Meyer, H.-J. Günterodt, C. Andreali, J. Brugger, M. Despont, P. Vettiger, J.-H. Fabian, T. Mezzacasa, L. Scandella, Ch. Gerber, J.K. Gimzewski, An electronic nose based on a micromechanical cantilever array. Proceed. of μTAS 98 Workshop 1998, Banff, Canada, October, 13—16, 57–60.
K.E. Petersen, Silicon torsional scanning mirror. IBM J. Res. Dev., No 24, 1980, 631–637.
H. Kück, W. Doleschal, A. Gehner, W. Grundke, R. Mehler, J. Paufler, R. Zeltmann, G. Zimmer, Deformable mirror devices as faze modulating high resolution light valves. Sensors and Actuators A, 52-54, 1996, 536–541.
J.B. Sampsell, The digital micromirror device and its application to projection displays. Proc. Transducers 93, Yokohama, Japan, 7—10 June 1993, 24–27.
B. Mischke, Mikromechanik. Radio Fernsehen Elektronik, 1988, 37,9.
J.C. Greenwood, Etched silicon vibration sensor. J. Phys. Sci. Instrum., 17, 1985, 680–683.
H.K. Trien, L. Ewe, W. Mokwa, M. Schwarz, B.J. Hosticka, Flexible silicon structures for a retina implant. IEEE Workshop MEMS 1998, January 25—29, Heidelberg, Germany, 515–519.
S. Kolnsberg, K. Stangel, D. Hammerschmidt, M. Schwarz, B.J. Hosticka, L. Ewe, H.K. Trieu, W. Mokwa, CMOS micro transceivers in ophthalmology. World Microtech. Cong. Proceed. MICRO. tec, 2000, Expo 2000, Hannover, Germany.
P. Mion, J. Kim, Feedback control of turbulence. Appl. Mech. Rev., 47(5-6), part 1—3, 1994.
W.H. Ko, The future of sensors and actuators systems. Sensors and Actuators A, 56, 1996, 193–197.
M. Humayun, E. de Juan, G. Dagnielle, R. Greenberg, R. Propst, H. Phillips, Visual perception elicited by electrical simulation of the retina in blind humans. Arch. Ophtalmol., 114, 1996, 40–46.
A. Lal, R.M. White, Silicon microfabricated horns for power ultrasonics. Proceed. Transducers 95, Eurosensors IX, 8th Int. Conf. Solid St. Sensors and Actuators, June 25—29, Stockholm, Sweden, 1995, 405–408.
S. Charles, R. Williams, T.L. Poteat, Micromachined structures in ophthalmic microsurgery. Sensors and Actuators A, 21-23, 1990, 263–266.
A. Górecka-Drzazga, J. Dziuban, Fabrication of silicon microtips. Metal/nonmetal Microsystems: physics, technology, applications, Polanica Zdr. 11—14 Sept., 1994. Proc. SPIE, Vol. 2780, 380–383.
A. Górecka-Drzazga, J. Dziuban, Technological aspects of FEA’s fabrication. Proceedings of 2nd Int. Workshop on Vacuum Microelectronics of 12th Int. Vacuum Microelectronic. Conf., July 6—9, July 11—13, 1999, Darmstadt-Wroclaw, 102–104.
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(2006). Deep, Three-Dimensional Silicon Micromachining. In: Bonding in Microsystem Technology. Springer Series in Advanced Microelectronics, vol 24. Springer, Dordrecht. https://doi.org/10.1007/1-4020-4589-1_3
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