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EKV3.0: An advanced charge based MOS transistor model.A design-oriented MOS transistor compact model

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TRANSISTOR LEVEL MODELING FOR ANALOG/RF IC DESIGN

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Author information

Authors and Affiliations

  1. Technical University of Crete (TUC), 73100, Chania, Crete, Greece

    Matthias Bucher

  2. National Technical University of Athens (NTUA), 15773, Athens, Greece

    Antonios Bazigos

  3. Swiss Federal Institute of Technology (EPFL), 1015, Lausanne, Switzerland

    François Krummenacher

  4. Swiss Federal Institute of Technology (EPFL), 1015, Lausanne, Switzerland

    Jean-Micehl Sallese

  5. Swiss Federal Institute of Technology (EPFL), 1015, Lausanne, Switzerland

    Christian Enz

Authors
  1. Matthias Bucher
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  2. Antonios Bazigos
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  3. François Krummenacher
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  4. Jean-Micehl Sallese
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  5. Christian Enz
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Editors and Affiliations

  1. Freescale, Switzerland

    WLADYSLAW GRABINSKI

  2. Belgium

    BART NAUWELAERS

  3. Kasteelpark Arenberg 10, 3001, Leuven, Belgium

    DOMINIQUE SCHREURS

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Bucher, M., Bazigos, A., Krummenacher, F., Sallese, JM., Enz, C. (2006). EKV3.0: An advanced charge based MOS transistor model.A design-oriented MOS transistor compact model. In: GRABINSKI, W., NAUWELAERS, B., SCHREURS, D. (eds) TRANSISTOR LEVEL MODELING FOR ANALOG/RF IC DESIGN. Springer, Dordrecht. https://doi.org/10.1007/1-4020-4556-5_3

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  • DOI: https://doi.org/10.1007/1-4020-4556-5_3

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  • Online ISBN: 978-1-4020-4556-1

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