Abstract
Amorphous silicon carbon films having near stochiometric composition had been deposited by (i) reactive magnetron sputtering of silicon target in argon-methane gas mixture (a-SiC:H films) and (ii) ion-plasma deposition using polycrystalline silicon carbide as a vacuum arc source (a-SiC films).
Main research objective was focused on peculiarities of the short order structure and electronic properties of a-SiC:H and a-SiC films. It was shown that a-SiC film is more dense and hard in comparison with a- SiC:H. The a-SiC:H films are soft, nanoporous and show visible room temperature photoluminescence. Efficiency of photoluminescence of a- SiC:H can be increased by one order of magnitude by low temperature treatment. It was shown that carbon-hydrogen bonds in Si-C-H structural form play an important role in light absorption and emitting process.
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References
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Vasin, A. et al. (2005). Comparative Study of Near Stochiometric a-SiC:H and a-SiC Films: Effect of the Bonded Hydrogen. In: Lee, J., Novikov, N., Turkevich, V. (eds) Innovative Superhard Materials and Sustainable Coatings for Advanced Manufacturing. NATO Science Series II: Mathematics, Physics and Chemistry, vol 200. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3471-7_34
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DOI: https://doi.org/10.1007/1-4020-3471-7_34
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-3469-5
Online ISBN: 978-1-4020-3471-8
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