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Achievement of SiGe-on-Insulator Technology

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Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment

Part of the book series: NATO Science Series II: Mathematics, Physics and Chemistry ((NAII,volume 185))

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Abstract

Fabrication technologies of SiGe-OI substrate, using SIMOX, bonding and growth of SiGe on top of Si-OI, are described. Attention was paid to the mechanism how SiGe-OI develops, and how the Ge concentration ceiling can be lifted. It is also indicated the achieved level of lattice relaxation and dislocation density of the SiGe layer in SiGe-OI. Remaining issues, which would be solved in order to develop devices based on SiGe-OI, are pointed out.

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Author information

Authors and Affiliations

  1. Japan Fine Ceramics Center, 2-4-1, Mutsuno, Atsuta, Nagoya, Japan

    Yukari Ishikawa & N. Shibata

  2. The University of Tokyo, 3-8-1, Komaba, Meguro, Tokyo, Japan

    S. Fukatsu

Authors
  1. Yukari Ishikawa
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  2. N. Shibata
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  3. S. Fukatsu
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Editor information

Editors and Affiliations

  1. Microelectronics Laboratory, Université Catholique de Louvain, Louvain-la-Neuve, Belgium

    Denis Flandre

  2. Institute of Semiconductor Physics, National Academy of Science of Ukraine, Kyiv, Ukraine

    Alexei N. Nazarov

  3. School of Electronics and Physical Sciences, University of Surrey, Guildford, UK

    Peter L.F. Hemment

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© 2005 Kluwer Academic Publishers

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Ishikawa, Y., Shibata, N., Fukatsu, S. (2005). Achievement of SiGe-on-Insulator Technology. In: Flandre, D., Nazarov, A.N., Hemment, P.L. (eds) Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment. NATO Science Series II: Mathematics, Physics and Chemistry, vol 185. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3013-4_6

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  • DOI: https://doi.org/10.1007/1-4020-3013-4_6

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-4020-3011-6

  • Online ISBN: 978-1-4020-3013-0

  • eBook Packages: EngineeringEngineering (R0)

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